Publications

Found 220 results
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Filters: Author is Palmstrom, C. J.  [Clear All Filters]
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Cheeks T.L, Sands T., Nahory R.E, Harbison J.P, Palmstrom C.J, Gilchrist H.L, Ramesh R., Keramidas V.G.  1990.  EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
Xie J.Q, Dong J.W, Lu J., Palmstrom C.J, McKernan S..  2001.  Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs. Applied Physics Letters. 79:1003-1005.
Dong J.W, Chen L.C, Xie J.Q, Muller T.AR, Carr D.M, Palmstrom C.J, McKernan S., Pan Q., James R.D.  2000.  Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers. Journal of Applied Physics. 88:7357-7359.
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Chen L.C, Dong J.W, Schultz B.D, Palmstrom C.J, Berezovsky J., Isakovic A., Crowell P.A, Tabat N..  2000.  Epitaxial ferromagnetic metal/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 18:2057-2062.
Palmstrom C.J, Fimland B.O, Sands T., Garrison K.C, Bartynski R.A.  1989.  EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
Schultz B.D, Choi S.G, Palmstrom C.J.  2006.  Embedded growth mode of thermodynamically stable metallic nanoparticles on III-V semiconductors. Applied Physics Letters. 88
Schultz B.D, Palmstrom C.J.  2006.  Embedded assembly mechanism of stable metal nanocrystals on semiconductor surfaces. Physical Review B. 73
Komesu T., Jeong H.K, Choi J., Borca C.N, Dowben P.A, Petukhov A.G, Schultz B.D, Palmstrom C.J.  2003.  Electronic structure of ErAs(100). Physical Review B. 67
Strand J., Lou X., Adelmann C., Schultz B.D, Isakovic A.F, Palmstrom C.J, Crowell P.A.  2005.  Electron spin dynamics and hyperfine interactions in Fe/Al0.1Ga0.9As/GaAs spin injection heterostructures. Physical Review B. 72
Garlid E.S, Hu Q.O, Geppert C., Chan M.K, Palmstrom C.J, Crowell P.A.  2011.  Electrical measurement of the spin Hall effects in Fe/In xGa 1-xAs heterostructures. 2011 69th Annual Device Research Conference (DRC). :155-8.
Garlid E.S, Hu Q.O, Chan M.K, Palmstrom C.J, Crowell P.A.  2010.  Electrical Measurement of the Direct Spin Hall Effect in Fe/InxGa1-xAs Heterostructures. Physical Review Letters. 105
Lou X., Adelmann C., Furis M., Crooker S.A, Palmstrom C.J, Crowell P.A.  2006.  Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. Physical Review Letters. 96
Xie J.Q, Lu J., Dong J.W, Dong X.Y, Shih T.C, McKernan S., Palmstrom C.J.  2005.  Effects of growth temperature on the structural and magnetic properties of epitaxial Ni2MnIn thin films on InAs(001). Journal of Applied Physics. 97
Adelmann C., Xie J.Q, Palmstrom C.J, Strand J., Lou X., Wang J., Crowell P.A.  2005.  Effects of doping profile and post-growth annealing on spin injection from Fe into (AI,Ga)As heterostructures. Journal of Vacuum Science & Technology B. 23:1747-1751.
Yang Y.N, Luo Y.S, Weaver J.H, Florez L.T, Palmstrom C.J.  1992.  EFFECTS OF ANNEALING ON THE SURFACE-MORPHOLOGY OF DECAPPED GAAS(001). Applied Physics Letters. 61:1930-1932.
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
D
Strand J., Schultz B.D, Isakovic A.F, Palmstrom C.J, Crowell P.A.  2003.  Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures. Physical Review Letters. 91
Liu C., Patel S.J., Peterson T.A., Geppert C.C., Christie K.D., Stecklein G., Palmstrom C.J, Crowell P.A.  2016.  Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance. Nature Communications. 7, 10296
Duszak R., Palmstrom C.J, Florez L.T, Yang Y.N, Weaver J.H.  1992.  DRAMATIC WORK FUNCTION VARIATIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(100) SURFACES. Journal of Vacuum Science & Technology B. 10:1891-1897.
Choi S.G, Aspnes D.E, Stoute N.A, Kim Y.D, Kim H.J, Chang Y.C, Palmstrom C.J.  2008.  Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. Physica Status Solidi a-Applications and Materials Science. 205:884-887.
Choi S.G, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV. Journal of Applied Physics. 98
Choi S.G, Palmstrom C.J, Kim Y.D, Aspnes D.E, Kim H.J, Chang Y-C.  2007.  Dielectric functions and electronic structure of InAsxP1-x films on InP. Applied Physics Letters. 91
Shojaei B., O'Malley P.JJ, Shabani J., Roushan P., Schultz B.D, Lutchyn R.M., Nayak C., Martinis J.M., Palmstrom C.J.  2016.  Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. Physical Review B. 93, 075302
Hong B.WP, Song J.I, Palmstrom C.J, Vandergaag B., Chough K.B, Hayes J.R.  1994.  DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Transactions on Electron Devices. 41:19-25.

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