Palmstrom C.J.  1995.  EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.

Wang L.C, Park M.H, Deng F., Clawson A., Lau S.S, Hwang D.M, Palmstrom C.J.  1995.  GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.

Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.

Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.

Moon-Ho P, Wang L.C, Fei D, Clawson A., Lau S.S, Cheng J.Y, Hwang D.M, Palmstrom C.J.  1995.  Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.

Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.

Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.

Zhang K., Brehmer D.E, Allen S.J, Palmstrom C.J.  1995.  RESONANT-TUNNELING IN SEMI-METAL/SEMICONDUCTOR, ERAS/(AL,GA)AS, HETEROSTRUCTURES. Compound Semiconductors 1994. :845-850.

Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Palmstrom C.J, Wilkens B..  1995.  RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.

Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  STUDY OF MOLECULAR-BEAM EPITACTIC GROWTH OF GAAS ON (100) SC(X)E(1-X)AS/GAAS. Journal of Applied Physics. 77:4312-4320.

Miceli P.F, Palmstrom C.J.  1995.  X-RAY-SCATTERING FROM ROTATIONAL DISORDER IN EPITAXIAL-FILMS - AN UNCONVENTIONAL MOSAIC CRYSTAL. Physical Review B. 51:5506-5509.

Wuyts K., Watte J., Silverans R.E, Vanhove M., Borghs G., Palmstrom C.J, Florez L.T, Munder H..  1994.  BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.

Hong B.WP, Song J.I, Palmstrom C.J, Vandergaag B., Chough K.B, Hayes J.R.  1994.  DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Transactions on Electron Devices. 41:19-25.

Palmstrom C.J, Vandergaag B.P, Song J.I, Hong W.P, Schwarz S.A, Novak S..  1994.  GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.

Song J.I, Hong B.WP, Palmstrom C.J, Chough K.B.  1994.  InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.

Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.

Luo Y.S, Yang Y.N, Weaver J.H, Florez L.T, Palmstrom C.J.  1994.  MULTIORIENTATIONAL GROWTH OF AL ON GAAS(001) STUDIED WITH SCANNING-TUNNELING-MICROSCOPY. Physical Review B. 49:1893-1899.

Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.

Jong-In S, Hong B.WP, Palmstrom C.J, Van Der Gaag B.P, Chough K.B.  1994.  Ultra-high-speed InP/InGaAs heterojunction bipolar transistors. IEEE Electron Device Letters. 15:94-6.

Song J.I, Hong B.WP, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  ULTRA-HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Electron Device Letters. 15:94-96.

Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.

Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.

Song J.I, Palmstrom C.J, Vandergaag B.P, Hong W.P, Hayes J.R, Chough K.B.  1993.  HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:666-667.

Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.

Allen S.J, Brehmer D., Palmstrom C.J.  1993.  Novel electronics enabled by rare earth arsenides buried in III-V semiconductors. Rare Earth Doped Semiconductors Symposium. :307-17.