Publications
Resonant tunneling through rare earth arsenide, semimetal quantum wells. Solid-State Electronics. 40:241-244.
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1996. Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs. Applied Physics Letters. 68:84-86.
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1996. Specular and diffuse reflectivity from thin films containing misfit dislocations. Physica B. 221:230-234.
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1996. Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
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1995. EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.
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1995. GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
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1995. LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
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1995. MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
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1995. Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.
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1995. Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
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1995. Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.
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1995. RESONANT-TUNNELING IN SEMI-METAL/SEMICONDUCTOR, ERAS/(AL,GA)AS, HETEROSTRUCTURES. Compound Semiconductors 1994. :845-850.
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1995. RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.
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1995. STUDY OF MOLECULAR-BEAM EPITACTIC GROWTH OF GAAS ON (100) SC(X)E(1-X)AS/GAAS. Journal of Applied Physics. 77:4312-4320.
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1995. X-RAY-SCATTERING FROM ROTATIONAL DISORDER IN EPITAXIAL-FILMS - AN UNCONVENTIONAL MOSAIC CRYSTAL. Physical Review B. 51:5506-5509.
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1995. BACK SIDE RAMAN MEASUREMENTS ON GE/PD/N-GAAS OHMIC CONTACT STRUCTURES. Applied Physics Letters. 64:2406-2408.
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1994. DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Transactions on Electron Devices. 41:19-25.
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1994. GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.
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1994. InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.
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1994. MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
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1994. MULTIORIENTATIONAL GROWTH OF AL ON GAAS(001) STUDIED WITH SCANNING-TUNNELING-MICROSCOPY. Physical Review B. 49:1893-1899.
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1994. SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
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1994. Ultra-high-speed InP/InGaAs heterojunction bipolar transistors. IEEE Electron Device Letters. 15:94-6.
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1994. ULTRA-HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Electron Device Letters. 15:94-96.
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1994. EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
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1993.