Publications

Found 370 results
Author Title [ Type(Desc)] Year
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Journal Article
Chan M.K, Hu Q.O, Zhang J., Kondo T., Palmstrom C.J, Crowell P.A.  2009.  Hyperfine interactions and spin transport in ferromagnet-semiconductor heterostructures. Physical Review B. 80
Rodwell M.JW, Singisetti U., Wistey M., Burek G.J, Carter A., Baraskar A., Law J., Thibeault B.J, Ji KEun, Shin B. et al..  2010.  III-V MOSFETs: scaling laws, scaling limits, fabrication processes. 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM 2010). :6pp.-6pp..
Crooker S.A, Smith D.L, Palmstrom C.J, Crowell P.A.  2008.  Imaging spin injection and spin transport in semiconductors. 2008 Quantum Electronics and Laser Science Conference (QELS). :1pp.-1pp..
Crooker S.A, Furis M., Lou X., Adelmann C., Smith D.L, Palmstrom C.J, Crowell P.A.  2005.  Imaging spin transport in lateral ferromagnet/semiconductor structures. Science. 309:2191-2195.
Makowski J.D, Saarinen M.J, Palmstrom C.J, Talghader J.J.  2008.  Impact of an air barrier on the electron states of etch-released quantum heterostructures. 2008 IEEE/LEOS Internationall Conference on Optical MEMs and Nanophotonics. :184-5.
Palmstrom C.J, Kavanagh K.L, Hollis M.J, Mukherjee S.D, Mayer J.W.  1985.  Improved uniformity of reacted GaAs contacts by interface mixing. Layered Structures, Epitaxy, and Interfaces Symposium. :473-8.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In situ controlled reactions and phase formation of thin films on GaAs. Journal of Vacuum Science & Technology B. 16:2280-2285.
Chen L.C, Palmstrom C.J.  1999.  In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology B. 17:1877-1883.
Chen L.C, Caldwell D.A, Finstad T.G, Palmstrom C.J.  1999.  In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 17:1307-1312.
Krafcsik I., Gyulai J., Palmstrom C.J, Mayer J.W.  1983.  INFLUENCE OF CU AS AN IMPURITY IN AL/TI AND AL/W THIN-FILM REACTIONS. Applied Physics Letters. 43:1015-1017.
Colgan E.G, Palmstrom C.J, Mayer J.W.  1985.  INFLUENCE OF CU AS AN IMPURITY IN AL/V THIN-FILM REACTIONS. Journal of Applied Physics. 58:1838-1840.
Park S., Fitzsimmons M.R, Majkrzak C.F, Schultz B.D, Palmstrom C.J.  2008.  The influence of growth temperature and annealing on the magnetization depth profiles across ferromagnetic/semiconductor interfaces. Journal of Applied Physics. 104
Park S., Fitzsimmons M.R, Majkrzak C.F, Schultz B.D, Palmstrom C.J.  2008.  The influence of growth temperature and annealing on the magnetization depth profiles across ferromagnetic/semiconductor interfaces. Journal of Applied Physics. 104
Peterson T.A., McFadden A.P., Palmstrøm C.J., Crowell P.A..  2018.  Influence of the magnetic proximity effect on spin-orbit torque efficiencies in ferromagnet/platinum bilayers. Phys Rev B. 97
Peterson T.A., McFadden A.P., Palmstrøm C.J., Crowell P.A..  2018.  Influence of the magnetic proximity effect on spin-orbit torque efficiencies in ferromagnet/platinum bilayers. Phys Rev B. 97
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
Song J.I, Hong B.WP, Palmstrom C.J, Chough K.B.  1994.  InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.
Palmstrom C.J, Garrison K., Fimland B.O, Harbison J.P, Sands T., Chase E.W, Florez L..  1988.  INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs. Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium. :455-60.
Kramer E.J, Green P., Palmstrom C.J.  1984.  INTERDIFFUSION AND MARKER MOVEMENTS IN CONCENTRATED POLYMER POLYMER DIFFUSION COUPLES. Polymer. 25:473-480.
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
McFadden A., Wilson N., Brown-Heft T., Pennachio D., Pendharkar M., Logan J.A., Palmstrøm C.J..  2017.  Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration. Journal of Magnetism and Magnetic Materials. 444:383-389.
McFadden A., Wilson N., Brown-Heft T., Pennachio D., Pendharkar M., Logan J.A., Palmstrøm C.J..  2017.  Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration. Journal of Magnetism and Magnetic Materials. 444:383-389.
McFadden A., Wilson N., Brown-Heft T., Pennachio D., Pendharkar M., Logan J.A., Palmstrøm C.J..  2017.  Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration. Journal of Magnetism and Magnetic Materials. 444:383-389.

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