Found 293 results
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
Wilkens B.J, Martinez J.A, Mounier S., Palmstrom C.J.  1991.  ION CHANNELING STUDY OF STRAINED ERAS FILMS ON (001) GAAS. Journal of Applied Physics. 70:4890-4893.
Stoffel N.G, Palmstrom C.J, Wilkens B.J.  1991.  ION CHANNELING MEASUREMENT OF THE LATTICE REGISTRY OF ULTRATHIN ERAS LAYERS IN GAAS/ERAS/GAAS (001) HETEROSTRUCTURES. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 56-7:792-794.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  Ion beam analysis of diffusion in polymer melts. Electronic Packaging Materials Science. Materials Research Society Symposia Proceedings. :265-70.
Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J.  2004.  Interfacial reactions of Mn/GaAs thin films. Applied Physics Letters. 84:3145-3147.
Ma Z., Allen L.H, Blanpain B., Hong Q.Z, Mayer J.W, Palmstrom C.J.  1991.  Interfacial reactions between In/Pd and GaAs. Phase Transformation Kinetics in Thin Films Symposium. :131-7.
Olowolafe J.O, Colgan E.G, Palmstrom C.J, Mayer J.W.  1986.  INTERFACIAL REACTION OF MO-W ALLOYS WITH SILICON. Thin Solid Films. 138:245-254.
McFadden A., Wilson N., Brown-Heft T., Pennachio D., Pendharkar M., Logan J.A., Palmstrøm C.J..  2017.  Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration. Journal of Magnetism and Magnetic Materials. 444:383-389.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs. Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium. :455-60.
Palmstrom C.J, Garrison K., Fimland B.O, Harbison J.P, Sands T., Chase E.W, Florez L..  1988.  INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
Song J.I, Hong B.WP, Palmstrom C.J, Chough K.B.  1994.  InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
Peterson T.A., McFadden A.P., Palmstrøm C.J., Crowell P.A..  2018.  Influence of the magnetic proximity effect on spin-orbit torque efficiencies in ferromagnet/platinum bilayers. Phys Rev B. 97
Park S., Fitzsimmons M.R, Majkrzak C.F, Schultz B.D, Palmstrom C.J.  2008.  The influence of growth temperature and annealing on the magnetization depth profiles across ferromagnetic/semiconductor interfaces. Journal of Applied Physics. 104
Colgan E.G, Palmstrom C.J, Mayer J.W.  1985.  INFLUENCE OF CU AS AN IMPURITY IN AL/V THIN-FILM REACTIONS. Journal of Applied Physics. 58:1838-1840.
Krafcsik I., Gyulai J., Palmstrom C.J, Mayer J.W.  1983.  INFLUENCE OF CU AS AN IMPURITY IN AL/TI AND AL/W THIN-FILM REACTIONS. Applied Physics Letters. 43:1015-1017.
Chen L.C, Caldwell D.A, Finstad T.G, Palmstrom C.J.  1999.  In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 17:1307-1312.
Chen L.C, Palmstrom C.J.  1999.  In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology B. 17:1877-1883.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In situ controlled reactions and phase formation of thin films on GaAs. Journal of Vacuum Science & Technology B. 16:2280-2285.
Palmstrom C.J, Kavanagh K.L, Hollis M.J, Mukherjee S.D, Mayer J.W.  1985.  Improved uniformity of reacted GaAs contacts by interface mixing. Layered Structures, Epitaxy, and Interfaces Symposium. :473-8.
Makowski J.D, Saarinen M.J, Palmstrom C.J, Talghader J.J.  2008.  Impact of an air barrier on the electron states of etch-released quantum heterostructures. 2008 IEEE/LEOS Internationall Conference on Optical MEMs and Nanophotonics. :184-5.
Crooker S.A, Furis M., Lou X., Adelmann C., Smith D.L, Palmstrom C.J, Crowell P.A.  2005.  Imaging spin transport in lateral ferromagnet/semiconductor structures. Science. 309:2191-2195.