Publications

Found 293 results
Author [ Title(Desc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
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Kawasaki JK, Timm R, Delaney KT, Lundgren E, Mikkelsen A, Palmstrom CJ.  2011.  Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs. Physical Review Letters. 107
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Oogane M., McFadden A.P., Fukuda K., Tsunoda M., Ando Y., Palmstrøm C.J..  2018.  Low magnetic damping and large negative anisotropic magnetoresistance in halfmetallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. Appl. Phys. Lett.. 112, 262407(https://doi.org/10.1063/1.5030341)
Moon-Ho P, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance ohmic contact scheme ( muOmega cm 2) to p-InP. Applied Physics Letters. 70:99-101.
Park M.H, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance Ohmic contact scheme (similar to mu Omega cm(2)) to p-InP. Applied Physics Letters. 70:99-101.
Park M.H, Wang L.C, Palmstrom C.J.  1997.  Low resistance Pd/Zn/Pd ohmic contact to p-In(0.82)Ga0.18As(0.39)P(0.61). Journal of Applied Physics. 81:2720-2724.
Moon-Ho P, Wang L.C, Cheng J.Y, Fei D, Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn 3P 2/InP heterostructure Ohmic contact to p-InP. Applied Physics Letters. 68:952-4.
Park M.H, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn3P2/InP heterostructure ohmic contact to p-InP. Applied Physics Letters. 68:952-954.
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Pechan M.J, Compton R.L, Bennett D., Chen L.C, Palmstrom C.J, Allen S.J.  2001.  Magnetic anisotropy and interlayer coupling in Fe0.5Co0.5(100) films on GaAs(100). Journal of Applied Physics. 89:7514-7516.
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B. 70
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B (Condensed Matter and Materials Physics). 70:104406-1-10.
Pan Q., Dong J.W, Palmstrom C.J, Cui J., James R.D.  2002.  Magnetic domain observations of freestanding single crystal patterned Ni2MnGa films. Journal of Applied Physics. 91:7812-7814.
Qi P, Dong J.W, Palmstrom C.J, Cui J., James R.D.  2002.  Magnetic domain observations of freestanding single crystal patterned Ni 2MnGa films. Journal of Applied Physics. 91:7812-14.
Matsuo S., Kamata H., Baba S., Deacon R.S., Shabani J., Palmstrøm C.J., Tarucha S..  2017.  Magnetic field inducing Zeeman splitting and anomalous conductance reduction of half-integer quantized plateaus in InAs quantum wires. Phys Rev B. 96
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Allen S.J, Tabatabaie N., Palmstrom C.J, Mounier S., Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1990.  MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
Bogaerts R., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1992.  MAGNETOTRANSPORT MEASUREMENTS ON THIN SC1-XERXAS EPITAXIAL-FILMS IN PULSED MAGNETIC-FIELDS. Physica B. 177:425-429.
Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  MARKER DISPLACEMENT MEASUREMENTS OF POLYMER POLYMER INTERDIFFUSION. Macromolecules. 18:501-507.
Buschbeck J., Kawasaki J.K, Kozhanov A., James R.D, Palmstrom C.J.  2011.  Martensite transformation of epitaxial Ni-Ti films. Applied Physics Letters. 98
Shojaei B., McFadden A.P., Pendharkar M., Lee J.S., Flatté M.E., Palmstrøm C.J..  2018.  Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Phys Rev Materials. 2, 064603(https://doi.org/10.1103/PhysRevMaterials.2.064603)
Chen L.C, Caldwell D.A, Muller T.A, Finstad T.G, Schildgen W., Palmstrom C.J.  1999.  MBE growth and in situ electrical characterization of metal semiconductor structures. Journal of Crystal Growth. 201:146-149.
Palmstrom C.J, Carr D.M, Dong J.W, Dong X., Lu J., Ludge K., McKernan S., Schultz B.D, Shih T.C, Xie J.Q et al..  2002.  MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures. 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607). :117-18.
Dong J.W, Lu J., Xie J.Q, Chen L.C, James R.D, McKernan S., Palmstrom C.J.  2001.  MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs. Physica E. 10:428-432.
Makowski JD, Anderson BD, Chang WS, Saarinen MJ, Palmstrom CJ, Talghader JJ.  2010.  Mechanical Construction of Semiconductor Band Gaps. Ieee Journal of Quantum Electronics. 46:1261-1267.
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.

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