Publications

Found 280 results
Author Title Type [ Year(Asc)]
1998
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In situ controlled reactions and phase formation of thin films on GaAs. Journal of Vacuum Science & Technology B. 16:2280-2285.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs. Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium. :455-60.
Kramer D.E, Chen L.C, Palmstrom C.J, Gerberich W.W.  1998.  Substrate effects on yield point phenomena in epitaxial thin films. Fundamentals of Nanondentation and Nanotribology. Symposium. :89-94.
1996
Tanaka M., Palmstrom C.J, Tsuda M., Nishinaga T..  1996.  Epitaxial semimetal (ErAs)/semiconductor (III-V) heterostructures: Negative differential resistance in novel resonant tunneling structures with an ErAs quantum well. Journal of Magnetism and Magnetic Materials. 156:276-278.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Moon-Ho P, Wang L.C, Cheng J.Y, Fei D, Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn 3P 2/InP heterostructure Ohmic contact to p-InP. Applied Physics Letters. 68:952-4.
Park M.H, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn3P2/InP heterostructure ohmic contact to p-InP. Applied Physics Letters. 68:952-954.
Moon-Ho P, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Pd/Zn/Pd ohmic contact to p-InP. IPRM 1996. Eighth International Conference on Indium Phosphide and Related Materials (Cat. No.96CH35930). :350-3.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Petukhov A.G, Palmstrom C.J, Wilkens B..  1996.  Resonant tunneling through rare earth arsenide, semimetal quantum wells. Solid-State Electronics. 40:241-244.
Tanaka M., Tsuda M., Nishinaga T., Palmstrom C.J.  1996.  Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs. Applied Physics Letters. 68:84-86.
Miceli P.F, Weatherwax J., Krentsel T., Palmstrom C.J.  1996.  Specular and diffuse reflectivity from thin films containing misfit dislocations. Physica B. 221:230-234.
1995
Schwarz S.A, Palmstrom C.J, Bhat R., Koza M., Wang L.C, Park M.H.  1995.  Backside SIMS study of Ge/Pd non-alloyed ohmic contacts on InGaAs. Beam-Solid Interactions for Materials Synthesis and Characterization. Symposium. :471-6.
Palmstrom C.J.  1995.  EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.
Wang L.C, Park M.H, Deng F., Clawson A., Lau S.S, Hwang D.M, Palmstrom C.J.  1995.  GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
Moon-Ho P, Wang L.C, Fei D, Clawson A., Lau S.S, Cheng J.Y, Hwang D.M, Palmstrom C.J.  1995.  Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.
Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.
Zhang K., Brehmer D.E, Allen S.J, Palmstrom C.J.  1995.  RESONANT-TUNNELING IN SEMI-METAL/SEMICONDUCTOR, ERAS/(AL,GA)AS, HETEROSTRUCTURES. Compound Semiconductors 1994. :845-850.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Palmstrom C.J, Wilkens B..  1995.  RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.

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