Publications

Found 293 results
Author Title [ Type(Desc)] Year
Journal Article
Chen L.C, Palmstrom C.J.  1999.  In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology B. 17:1877-1883.
Chen L.C, Caldwell D.A, Finstad T.G, Palmstrom C.J.  1999.  In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 17:1307-1312.
Krafcsik I., Gyulai J., Palmstrom C.J, Mayer J.W.  1983.  INFLUENCE OF CU AS AN IMPURITY IN AL/TI AND AL/W THIN-FILM REACTIONS. Applied Physics Letters. 43:1015-1017.
Colgan E.G, Palmstrom C.J, Mayer J.W.  1985.  INFLUENCE OF CU AS AN IMPURITY IN AL/V THIN-FILM REACTIONS. Journal of Applied Physics. 58:1838-1840.
Park S., Fitzsimmons M.R, Majkrzak C.F, Schultz B.D, Palmstrom C.J.  2008.  The influence of growth temperature and annealing on the magnetization depth profiles across ferromagnetic/semiconductor interfaces. Journal of Applied Physics. 104
Peterson T.A., McFadden A.P., Palmstrøm C.J., Crowell P.A..  2018.  Influence of the magnetic proximity effect on spin-orbit torque efficiencies in ferromagnet/platinum bilayers. Phys Rev B. 97
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
Song J.I, Hong B.WP, Palmstrom C.J, Chough K.B.  1994.  InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.
Palmstrom C.J, Garrison K., Fimland B.O, Harbison J.P, Sands T., Chase E.W, Florez L..  1988.  INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs. Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium. :455-60.
Kramer E.J, Green P., Palmstrom C.J.  1984.  INTERDIFFUSION AND MARKER MOVEMENTS IN CONCENTRATED POLYMER POLYMER DIFFUSION COUPLES. Polymer. 25:473-480.
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
McFadden A., Wilson N., Brown-Heft T., Pennachio D., Pendharkar M., Logan J.A., Palmstrøm C.J..  2017.  Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration. Journal of Magnetism and Magnetic Materials. 444:383-389.
Olowolafe J.O, Colgan E.G, Palmstrom C.J, Mayer J.W.  1986.  INTERFACIAL REACTION OF MO-W ALLOYS WITH SILICON. Thin Solid Films. 138:245-254.
Ma Z., Allen L.H, Blanpain B., Hong Q.Z, Mayer J.W, Palmstrom C.J.  1991.  Interfacial reactions between In/Pd and GaAs. Phase Transformation Kinetics in Thin Films Symposium. :131-7.
Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J.  2004.  Interfacial reactions of Mn/GaAs thin films. Applied Physics Letters. 84:3145-3147.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  Ion beam analysis of diffusion in polymer melts. Electronic Packaging Materials Science. Materials Research Society Symposia Proceedings. :265-70.
Stoffel N.G, Palmstrom C.J, Wilkens B.J.  1991.  ION CHANNELING MEASUREMENT OF THE LATTICE REGISTRY OF ULTRATHIN ERAS LAYERS IN GAAS/ERAS/GAAS (001) HETEROSTRUCTURES. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 56-7:792-794.
Wilkens B.J, Martinez J.A, Mounier S., Palmstrom C.J.  1991.  ION CHANNELING STUDY OF STRAINED ERAS FILMS ON (001) GAAS. Journal of Applied Physics. 70:4890-4893.
Christie K.D., Geppert C.C., Patel S.J., Hu Q.O, Palmstrøm C.J., Crowell P.A.  2015.  Knight shift and nuclear spin relaxation in Fe/n-GaAs heterostructures. Physical Review B. 92, 155204
Chen S.H, Carter C.B, Palmstrom C.J.  1988.  LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY. Journal of Materials Research. 3:1385-1396.
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  Lateral reactions of GaAs with Ni studied by transmission electron microscopy. Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society. :361-6.
Young A.J, Schultz B.D, Palmstrøm C.J.  2014.  Lattice distortion in single crystal rare-earth arsenide/GaAs nanocomposites. Applied Physics Letters. 104:-.
Miceli P.F, Moyers K.W, Palmstrom C.J.  1991.  Lattice relaxation of ErAs/GaAs: an X-ray scattering study. Evolution of Thin-Film and Surface Microstructure Symposium. :579-84.

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