Publications

Found 370 results
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Journal Article
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Xie J.Q, Dong J.W, Osinsky A., Chow P.P, Heo Y.W, Norton D.P, Pearton S.J, Dong X.Y, Adelmann C., Palmstrom C.J.  2006.  Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
Xie J.Q, Dong J.W, Osinsky A., Chow P.P, Heo Y.W, Norton D.P, Pearton S.J, Dong X.Y, Adelmann C., Palmstrom C.J.  2006.  Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC.  2010.  Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy. Journal of Crystal Growth. 312:2089-2092.
Buschbeck J., Kawasaki J.K, Buehl T.E, Gossard A.C, Palmstrom C.J.  2011.  Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation. Journal of Vacuum Science & Technology B. 29
Palmstrom C.J, Garrison K.C, Mounier S., Sands T., Schwartz C.L, Tabatabaie N., Allen S.J, Gilchrist H.L, Miceli P.F.  1989.  GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 7:747-752.
Zhu J.G, Palmstrom C.J, Carter C.B.  1991.  THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
Czanderna K.K, Morrissey K.J, Palmstrom C.J, Carter C.B, Merrill R.P.  1989.  GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.
Palmstrom C.J, Vandergaag B.P, Song J.I, Hong W.P, Schwarz S.A, Novak S..  1994.  GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.
Logan J.A., Brown-Heft T.L., Harrington S.D., Wilson N.S., McFadden A.P., Rice A.D., Pendharkar M., Palmstrøm C.J..  2017.  Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films. Journal of Applied Physics. 121
Logan J.A., Brown-Heft T.L., Harrington S.D., Wilson N.S., McFadden A.P., Rice A.D., Pendharkar M., Palmstrøm C.J..  2017.  Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films. Journal of Applied Physics. 121
Dong X.Y, Dong J.W, Xie J.Q, Shih T.C, McKernan S., Leighton C., Palmstrom C.J.  2003.  Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy. Journal of Crystal Growth. 254:384-389.
Hilton J.L, Schultz B.D, Palmstrom C.J.  2007.  Growth temperature dependence of Mn/GaAs surfaces and interfaces. Journal of Applied Physics. 102
Miceli P.F, Palmstrom C.J, Moyers K.W.  1992.  GROWTH-MORPHOLOGY OF EPITAXIAL ERAS/GAAS BY X-RAY EXTENDED RANGE SPECULAR REFLECTIVITY. Applied Physics Letters. 61:2060-2062.
Palmstrøm CJ.  2016.  Heusler Compounds and Spintronics. Progress in Crystal Growth and Characterization of Materials. 62
Palmstrom C.J, Schwarz S.A, Marshall E.D, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L., Gmitter T.J, Wang L.C, Lau S.S.  1988.  A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
Song J.I, Palmstrom C.J, Vandergaag B.P, Hong W.P, Hayes J.R, Chough K.B.  1993.  HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:666-667.
Zhu J.G, McKernan S., Palmstrom C.J, C. Carter B.  1990.  High-resolution imaging of CoGa/GaAs and ErAs/GaAs interfaces. Atomic Scale Structure of Interfaces Symposium. :89-94.
Chun-Gang D, Komesu T., Hae-Kyung J, Borca C.N, Wei-Guo Y, Jianjun L, Mei W.N, Dowben P.A, Petukhov A.G, Schultz B.D et al..  2004.  Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-9.
Duan C.G, Komesu T., Jeong H.K, Borca C.N, Yin W.G, Liu J., Mei W.N, Dowben P.A, Petukhov A.G, Schultz B.D et al..  2004.  Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-539.
Chun-Gang D, Komesu T., Hae-Kyung J, Borca C.N, Wei-Guo Y, Jianjun L, Mei W.N, Dowben P.A, Petukhov A.G, Schultz B.D et al..  2004.  Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-9.
Duan C.G, Komesu T., Jeong H.K, Borca C.N, Yin W.G, Liu J., Mei W.N, Dowben P.A, Petukhov A.G, Schultz B.D et al..  2004.  Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-539.

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