Publications
A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
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1988. INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
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1988.