Publications

Found 5 results
Author Title Type [ Year(Asc)]
Filters: Author is Hong, W. P.  [Clear All Filters]
1994
Palmstrom C.J, Vandergaag B.P, Song J.I, Hong W.P, Schwarz S.A, Novak S..  1994.  GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
1993
Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.
Song J.I, Palmstrom C.J, Vandergaag B.P, Hong W.P, Hayes J.R, Chough K.B.  1993.  HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:666-667.
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.