Publications

Found 220 results
Author Title [ Type(Desc)] Year
Filters: Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Allen S.J, Tabatabaie N., Palmstrom C.J, Mounier S., Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1990.  MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
Bogaerts R., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1992.  MAGNETOTRANSPORT MEASUREMENTS ON THIN SC1-XERXAS EPITAXIAL-FILMS IN PULSED MAGNETIC-FIELDS. Physica B. 177:425-429.
Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  MARKER DISPLACEMENT MEASUREMENTS OF POLYMER POLYMER INTERDIFFUSION. Macromolecules. 18:501-507.
Buschbeck J., Kawasaki J.K, Kozhanov A., James R.D, Palmstrom C.J.  2011.  Martensite transformation of epitaxial Ni-Ti films. Applied Physics Letters. 98
Chen L.C, Caldwell D.A, Muller T.A, Finstad T.G, Schildgen W., Palmstrom C.J.  1999.  MBE growth and in situ electrical characterization of metal semiconductor structures. Journal of Crystal Growth. 201:146-149.
Palmstrom C.J, Carr D.M, Dong J.W, Dong X., Lu J., Ludge K., McKernan S., Schultz B.D, Shih T.C, Xie J.Q et al..  2002.  MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures. 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607). :117-18.
Dong J.W, Lu J., Xie J.Q, Chen L.C, James R.D, McKernan S., Palmstrom C.J.  2001.  MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs. Physica E. 10:428-432.
Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Dong J.W, Chen L.C, Palmstrom C.J, James R.D, McKernan S..  1999.  Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs. Applied Physics Letters. 75:1443-1445.
Palmstrom C.J, Choi S.G, Schultz B.D, Wang Y.Q.  2007.  Molecular beam epitaxy of Sc xEr 1-xSb on InAs(100). Journal of Crystal Growth. 303:433-7.
Choi S.G, Schultz B.D, Wang Y.Q, Palmstrom C.J.  2007.  Molecular beam epitaxy of ScxEr1-xSb on InAs(100). Journal of Crystal Growth. 303:433-437.
Lu J., Dong J.W, Xie J.Q, McKernan S., Palmstrom C.J, Xin Y..  2003.  Molecular-beam-epitaxy growth of ferromagnetic Ni2MnGe on GaAs(001). Applied Physics Letters. 83:2393-2395.
Luo Y.S, Yang Y.N, Weaver J.H, Florez L.T, Palmstrom C.J.  1994.  MULTIORIENTATIONAL GROWTH OF AL ON GAAS(001) STUDIED WITH SCANNING-TUNNELING-MICROSCOPY. Physical Review B. 49:1893-1899.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Moon-Ho P, Wang L.C, Fei D, Clawson A., Lau S.S, Cheng J.Y, Hwang D.M, Palmstrom C.J.  1995.  Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Allen S.J, Brehmer D., Palmstrom C.J.  1993.  Novel electronics enabled by rare earth arsenides buried in III-V semiconductors. Rare Earth Doped Semiconductors Symposium. :307-17.

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