Publications

Found 201 results
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Journal Article
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B. 70
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B (Condensed Matter and Materials Physics). 70:104406-1-10.
Matsuo S., Kamata H., Baba S., Deacon R.S., Shabani J., Palmstrøm C.J., Tarucha S..  2017.  Magnetic field inducing Zeeman splitting and anomalous conductance reduction of half-integer quantized plateaus in InAs quantum wires. Phys Rev B. 96
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Allen S.J, Tabatabaie N., Palmstrom C.J, Mounier S., Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1990.  MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
Shojaei B., McFadden A.P., Pendharkar M., Lee J.S., Flatté M.E., Palmstrøm C.J..  2018.  Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Phys Rev Materials. 2, 064603(https://doi.org/10.1103/PhysRevMaterials.2.064603)
Chen L.C, Caldwell D.A, Muller T.A, Finstad T.G, Schildgen W., Palmstrom C.J.  1999.  MBE growth and in situ electrical characterization of metal semiconductor structures. Journal of Crystal Growth. 201:146-149.
Palmstrom C.J, Carr D.M, Dong J.W, Dong X., Lu J., Ludge K., McKernan S., Schultz B.D, Shih T.C, Xie J.Q et al..  2002.  MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures. 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607). :117-18.
Palmstrom C.J, Carr D.M, Dong J.W, Dong X., Lu J., Ludge K., McKernan S., Schultz B.D, Shih T.C, Xie J.Q et al..  2002.  MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures. 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607). :117-18.
Makowski JD, Anderson BD, Chang WS, Saarinen MJ, Palmstrom CJ, Talghader JJ.  2010.  Mechanical Construction of Semiconductor Band Gaps. Ieee Journal of Quantum Electronics. 46:1261-1267.
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
Palmstrom C.J, Choi S.G, Schultz B.D, Wang Y.Q.  2007.  Molecular beam epitaxy of Sc xEr 1-xSb on InAs(100). Journal of Crystal Growth. 303:433-7.
Choi S.G, Schultz B.D, Wang Y.Q, Palmstrom C.J.  2007.  Molecular beam epitaxy of ScxEr1-xSb on InAs(100). Journal of Crystal Growth. 303:433-437.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Strand J., Isakovic A.F, Lou X., Crowell P.A, Schultz B.D, Palmstrom C.J.  2003.  Nuclear magnetic resonance in a ferromagnet-semiconductor heterostructure. Applied Physics Letters. 83:3335-3337.
Strand J., Isakovic A.F, Lou X., Crowell P.A, Schultz B.D, Palmstrom C.J.  2003.  Nuclear magnetic resonance in a ferromagnet-semiconductor heterostructure. Applied Physics Letters. 83:3335-3337.
Logan J.A., Patel S.J., Harrington S.D., Polley C.M., Schultz B.D., Balasubramanian T., Janotti A., Mikkelsen A., Palmstrøm C.J..  2016.  Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films. Nature Communications. 7, 11993
Marshall E.D, Lau S.S, Palmstrom C.J, Sands T., Schwartz C.L, Schwarz S.A, Harbison J.P, Florez L.T.  1989.  Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
Marshall E.D, Lau S.S, Palmstrom C.J, Sands T., Schwartz C.L, Schwarz S.A, Harbison J.P, Florez L.T.  1989.  Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
Marshall E.D, Lau S.S, Palmstrom C.J, Sands T., Schwartz C.L, Schwarz S.A, Harbison J.P, Florez L.T.  1989.  Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.

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