Publications
In situ controlled reactions and phase formation of thin films on GaAs. Journal of Vacuum Science & Technology B. 16:2280-2285.
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1998. In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs. Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium. :455-60.
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1998. LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
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1995. MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
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1995. STUDY OF MOLECULAR-BEAM EPITACTIC GROWTH OF GAAS ON (100) SC(X)E(1-X)AS/GAAS. Journal of Applied Physics. 77:4312-4320.
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1995. EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
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1992. THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
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1991. Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
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1991. Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
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1990. MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
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1990. Phase boundaries between GaAs and other cubic materials. EMAG-MICRO 89. Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference. :411-14vol.1.
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1990. PHASE BOUNDARIES BETWEEN GAAS AND OTHER CUBIC MATERIALS. Institute of Physics Conference Series. :411-414.
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1990. STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
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1990. CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.
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1989. GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.
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1989. MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
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1989. Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
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1989. LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY. Journal of Materials Research. 3:1385-1396.
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1988. Lateral reactions of GaAs with Ni studied by transmission electron microscopy. Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society. :361-6.
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1986. TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON LATERAL REACTION OF GAAS WITH NI. Applied Physics Letters. 48:803-805.
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1986. RBS and TEM analysis of Ta silicides on GaAs. Thin Films and Interfaces II. Proceedings of the Symposium. :143-8.
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1984.