Publications

Found 220 results
Author Title [ Type(Asc)] Year
Filters: Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Park M.H, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn3P2/InP heterostructure ohmic contact to p-InP. Applied Physics Letters. 68:952-954.
Moon-Ho P, Wang L.C, Cheng J.Y, Fei D, Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn 3P 2/InP heterostructure Ohmic contact to p-InP. Applied Physics Letters. 68:952-4.
Park M.H, Wang L.C, Palmstrom C.J.  1997.  Low resistance Pd/Zn/Pd ohmic contact to p-In(0.82)Ga0.18As(0.39)P(0.61). Journal of Applied Physics. 81:2720-2724.
Park M.H, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance Ohmic contact scheme (similar to mu Omega cm(2)) to p-InP. Applied Physics Letters. 70:99-101.
Moon-Ho P, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance ohmic contact scheme ( muOmega cm 2) to p-InP. Applied Physics Letters. 70:99-101.
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  LIMITS OF REPTATION IN POLYMER MELTS. Physical Review Letters. 53:2145-2148.
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
Miceli P.F, Moyers K.W, Palmstrom C.J.  1991.  Lattice relaxation of ErAs/GaAs: an X-ray scattering study. Evolution of Thin-Film and Surface Microstructure Symposium. :579-84.
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  Lateral reactions of GaAs with Ni studied by transmission electron microscopy. Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society. :361-6.
Chen S.H, Carter C.B, Palmstrom C.J.  1988.  LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY. Journal of Materials Research. 3:1385-1396.
Wilkens B.J, Martinez J.A, Mounier S., Palmstrom C.J.  1991.  ION CHANNELING STUDY OF STRAINED ERAS FILMS ON (001) GAAS. Journal of Applied Physics. 70:4890-4893.
Stoffel N.G, Palmstrom C.J, Wilkens B.J.  1991.  ION CHANNELING MEASUREMENT OF THE LATTICE REGISTRY OF ULTRATHIN ERAS LAYERS IN GAAS/ERAS/GAAS (001) HETEROSTRUCTURES. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 56-7:792-794.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  Ion beam analysis of diffusion in polymer melts. Electronic Packaging Materials Science. Materials Research Society Symposia Proceedings. :265-70.
Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J.  2004.  Interfacial reactions of Mn/GaAs thin films. Applied Physics Letters. 84:3145-3147.
Ma Z., Allen L.H, Blanpain B., Hong Q.Z, Mayer J.W, Palmstrom C.J.  1991.  Interfacial reactions between In/Pd and GaAs. Phase Transformation Kinetics in Thin Films Symposium. :131-7.
Olowolafe J.O, Colgan E.G, Palmstrom C.J, Mayer J.W.  1986.  INTERFACIAL REACTION OF MO-W ALLOYS WITH SILICON. Thin Solid Films. 138:245-254.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
Kramer E.J, Green P., Palmstrom C.J.  1984.  INTERDIFFUSION AND MARKER MOVEMENTS IN CONCENTRATED POLYMER POLYMER DIFFUSION COUPLES. Polymer. 25:473-480.
Caldwell D.A, Chen L.C, Bensaoula A.H, Farrer J.K, Carter C.B, Palmstrom C.J.  1998.  In-situ regrowth of GaAs through controlled phase transformations and reactions of thin films on GaAs. Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits. Symposium. :455-60.
Palmstrom C.J, Garrison K., Fimland B.O, Harbison J.P, Sands T., Chase E.W, Florez L..  1988.  INSITU FABRICATED METAL ALLOY CONTACTS TO GA1-XALXAS (X=0-1) - A TEST OF MODELS FOR SCHOTTKY-BARRIER FORMATION. Journal of Electronic Materials. 17:S24-S25.
Song J.I, Hong B.WP, Palmstrom C.J, Chough K.B.  1994.  InP based carbon-doped base HBT technology: its recent advances and circuit applications. Conference Proceedings. Sixth International Conference on Indium Phosphide and Related Materials (Cat. No.94CH3369-6). :523-6.
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.

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