Publications

Found 220 results
Author Title [ Type(Desc)] Year
Filters: Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Bhat R., Koza M.A, BRASIL MJSP, Nahory R.E, Palmstrom C.J, Wilkens B.J.  1992.  INTERFACE CONTROL IN GAAS/GAINP SUPERLATTICES GROWN BY OMCVD. Journal of Crystal Growth. 124:576-582.
Sands T., Harbison J.P, Ramesh R., Palmstrom C.J, Florez L.T, Keramidas V.G.  1990.  INTERFACE CRYSTALLOGRAPHY AND STABILITY IN EPITAXIAL METAL (NIAL, COAL)/III-V SEMICONDUCTOR HETEROSTRUCTURES. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 6:147-157.
Olowolafe J.O, Colgan E.G, Palmstrom C.J, Mayer J.W.  1986.  INTERFACIAL REACTION OF MO-W ALLOYS WITH SILICON. Thin Solid Films. 138:245-254.
Ma Z., Allen L.H, Blanpain B., Hong Q.Z, Mayer J.W, Palmstrom C.J.  1991.  Interfacial reactions between In/Pd and GaAs. Phase Transformation Kinetics in Thin Films Symposium. :131-7.
Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J.  2004.  Interfacial reactions of Mn/GaAs thin films. Applied Physics Letters. 84:3145-3147.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  Ion beam analysis of diffusion in polymer melts. Electronic Packaging Materials Science. Materials Research Society Symposia Proceedings. :265-70.
Stoffel N.G, Palmstrom C.J, Wilkens B.J.  1991.  ION CHANNELING MEASUREMENT OF THE LATTICE REGISTRY OF ULTRATHIN ERAS LAYERS IN GAAS/ERAS/GAAS (001) HETEROSTRUCTURES. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 56-7:792-794.
Wilkens B.J, Martinez J.A, Mounier S., Palmstrom C.J.  1991.  ION CHANNELING STUDY OF STRAINED ERAS FILMS ON (001) GAAS. Journal of Applied Physics. 70:4890-4893.
Chen S.H, Carter C.B, Palmstrom C.J.  1988.  LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY. Journal of Materials Research. 3:1385-1396.
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  Lateral reactions of GaAs with Ni studied by transmission electron microscopy. Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society. :361-6.
Miceli P.F, Moyers K.W, Palmstrom C.J.  1991.  Lattice relaxation of ErAs/GaAs: an X-ray scattering study. Evolution of Thin-Film and Surface Microstructure Symposium. :579-84.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  LIMITS OF REPTATION IN POLYMER MELTS. Physical Review Letters. 53:2145-2148.
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Moon-Ho P, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance ohmic contact scheme ( muOmega cm 2) to p-InP. Applied Physics Letters. 70:99-101.
Park M.H, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance Ohmic contact scheme (similar to mu Omega cm(2)) to p-InP. Applied Physics Letters. 70:99-101.
Park M.H, Wang L.C, Palmstrom C.J.  1997.  Low resistance Pd/Zn/Pd ohmic contact to p-In(0.82)Ga0.18As(0.39)P(0.61). Journal of Applied Physics. 81:2720-2724.
Moon-Ho P, Wang L.C, Cheng J.Y, Fei D, Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn 3P 2/InP heterostructure Ohmic contact to p-InP. Applied Physics Letters. 68:952-4.
Park M.H, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn3P2/InP heterostructure ohmic contact to p-InP. Applied Physics Letters. 68:952-954.
Pechan M.J, Compton R.L, Bennett D., Chen L.C, Palmstrom C.J, Allen S.J.  2001.  Magnetic anisotropy and interlayer coupling in Fe0.5Co0.5(100) films on GaAs(100). Journal of Applied Physics. 89:7514-7516.
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B (Condensed Matter and Materials Physics). 70:104406-1-10.
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B. 70
Qi P, Dong J.W, Palmstrom C.J, Cui J., James R.D.  2002.  Magnetic domain observations of freestanding single crystal patterned Ni 2MnGa films. Journal of Applied Physics. 91:7812-14.
Pan Q., Dong J.W, Palmstrom C.J, Cui J., James R.D.  2002.  Magnetic domain observations of freestanding single crystal patterned Ni2MnGa films. Journal of Applied Physics. 91:7812-7814.

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