Publications

Found 370 results
Author Title [ Type(Desc)] Year
Filters: First Letter Of Last Name is P  [Clear All Filters]
Journal Article
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Kawasaki JK, Neulinger T, Timm R, Hjort M, Zakharov AA, Mikkelsen A, Schultz BD, Palmstrom CJ.  2013.  Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001). Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 31:04D106.
Dong J.W, Chen L.C, Xie J.Q, Muller T.AR, Carr D.M, Palmstrom C.J, McKernan S., Pan Q., James R.D.  2000.  Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers. Journal of Applied Physics. 88:7357-7359.
Dong J.W, Chen L.C, Xie J.Q, Muller T.AR, Carr D.M, Palmstrom C.J, McKernan S., Pan Q., James R.D.  2000.  Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers. Journal of Applied Physics. 88:7357-7359.
Xie J.Q, Dong J.W, Lu J., Palmstrom C.J, McKernan S..  2001.  Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs. Applied Physics Letters. 79:1003-1005.
Palmstrom C..  2003.  Epitaxial Heusler alloys: New materials for semiconductor spintronics. Mrs Bulletin. 28:725-728.
Brown-Heft T.L., Logan J.A., McFadden A.P, Guillemard C., Le Fèvre P., Betran F., Andrieu S., Palmstrøm C.J..  2018.  Epitaxial Heusler superlattice Co2MnAl/Fe2MnAl with perpendicular magnetic anisotropy and termination-dependent half-metallicity. Phys Rev Materials. 2, 034402
Cheeks T.L, Sands T., Nahory R.E, Harbison J.P, Palmstrom C.J, Gilchrist H.L, Ramesh R., Keramidas V.G.  1990.  EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
Tanaka M., Palmstrom C.J, Tsuda M., Nishinaga T..  1996.  Epitaxial semimetal (ErAs)/semiconductor (III-V) heterostructures: Negative differential resistance in novel resonant tunneling structures with an ErAs quantum well. Journal of Magnetism and Magnetic Materials. 156:276-278.
Palmstrom C.J, Tabatabaie N., Allen S.J.  1988.  EPITAXIAL-GROWTH OF ERAS ON (100)GAAS. Applied Physics Letters. 53:2608-2610.
Sands T., Harbison J.P, Chan W.K, Schwarz S.A, Chang C.C, Palmstrom C.J, Keramidas V.G.  1988.  EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES. Applied Physics Letters. 52:1216-1218.
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Yamada I., Palmstrom C.J, Kennedy E., Mayer J.W, Inokawa H., Takagi T..  1985.  Epitaxy of aluminium films on semiconductors by ionized cluster beam. Layered Structures, Epitaxy, and Interfaces Symposium. :401-6.
Palmstrom C.J.  1995.  EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.
Matsuo S., Ueda K., Baba S., Kamata H., Tateno M., Shabani J., Palmstrøm C.J., Tarucha S..  2018.  Equal-Spin Andreev Reflection on Junctions of Spin-Resolved Quantum Hall Bulk State and Spin-Singlet Superconductor. Scientific Reports. 8, 3454
Allen S.J, Tabatabaie N., Palmstrom C.J, Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1989.  ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
Schultz B.D, Farrell H.H, Evans M.MR, Ludge K., Palmstrom C.J.  2002.  ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 20:1600-1608.
Eid K.F, Stone M.B, Ku K.C, Maksimov O., Schiffer P., Samarth N., Shih T.C, Palmstrom C.J.  2004.  Exchange biasing of the ferromagnetic semiconductor Ga1-xMnxAs. Applied Physics Letters. 85:1556-1558.
Eid K.F, Stone M.B, Maksimov O., Shih T.C, Ku K.C, Fadgen W., Palmstrom C.J, Schiffer P., Samarth N..  2005.  Exchange biasing of the ferrornagnetic semiconductor (Ga,Mn)As by MnO (invited). Journal of Applied Physics. 97
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.

Pages