Found 293 results
Author [ Title(Desc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.
Palmstrom C.J, Garrison K.C, Fimland B.O, Sands T., Bartynski R.A.  1989.  Fabrication and electrical properties of MBE grown metal-gallium and metal-arsenic compounds on Ga 1-xAl xAs. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :583-8.
Yoneda J., Otsuka T., Nakajima T., Takakura T., Obata T., Pioro-Ladrière M., Lu H., Palmstrøm C.J, Gossard A.C, Tarucha S..  2014.  Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins. Phys. Rev. Lett. 113, 267601 (2014).
Chengtao Y, Pechan M.J, Srivastava S., Palmstrom C.J, Biegaslski M., Brooks C., Schlom D..  2008.  Ferromagnetic resonance in ferromagnetic/ferroelectric Fe/BaTiO 3/SrTiO 3(001). Journal of Applied Physics. 103:07B108-1-3.
Yu C, Pechan MJ, Srivastava S, Palmstrom CJ, Biegaslski M, Brooks C, Schlom D.  2008.  Ferromagnetic resonance in ferromagnetic/ferroelectric Fe/BaTiO(3)/SrTiO(3)(001). Journal of Applied Physics. 103
Chengtao Y, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: a study in Co 2MnGa (001). Journal of Applied Physics. 99:8J109-1-3.
Yu C.T, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: A study in Co2MnGa (001). Journal of Applied Physics. 99
Dong J.W, Chen L.C, McKernan S., Xie J.Q, Figus M.T, James R.D, Palmstrom C.J.  2000.  Formation and characterization of single crystal Ni 2MnGa thin films. Materials for Smart Systems. Symposium (Materials Research Society Proceedings Vol.604). :297-302.
Oogane M., McFadden A.P., Kota Y., Brown-Heft T.L., Tsunoda M., Ando Y., Palmstrøm C.J..  2018.  Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films. Jpn. J. Appl. Phys.. 57
Farrell H.H, Lu J., Schultz B.D, Denison A.B, Palmstrom C.J.  2001.  GaAs(111)B(root 19X root 19)R23.4 degrees surface reconstruction. Journal of Vacuum Science & Technology B. 19:1597-1605.
Shabani J., McFadden A.P, Shojaei B., Palmstrøm C.J.  2014.  Gating of high-mobility InAs metamorphic heterostructures. Appl. Phys. Lett. 105
Palmstrom C.J, Schwarz S.A, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L.T, Gmitter T.J, Marshall E.D, Lau S.S.  1990.  GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
Wang L.C, Park M.H, Deng F., Clawson A., Lau S.S, Hwang D.M, Palmstrom C.J.  1995.  GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
Schmidt D.R, Ibbetson J.P, Brehmer D.E, Palmstrom C.J, Allen S.J.  1997.  Giant magnetoresistance of self-assembled ErAs islands in GaAs. Magnetic Ultrathin Films, Multilayers and Surfaces - 1997 Symposium. :251-6.
Podpirka A.A., Shabani J., Katz M.B., Twigg M.E., Mack S., Palmstrom C.J., Bennett B.R..  2015.  Growth and characterization of (110) InAs quantum well metamorphic heterostructures. Journal of Applied Physics. 117, 245313
Garrison K.C, Palmstrom C.J, Bartynski R.A.  1989.  Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.
Cassels LE, Buehl TE, Burke PG, Palmstrom CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO.  2011.  Growth and characterization of TbAs:GaAs nanocomposites. Journal of Vacuum Science & Technology B. 29
Kawasaki JK, Johansson LIM, Schultz BD, Palmstrøm CJ.  2014.  Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures. Applied Physics Letters. 104
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Xie J.Q, Dong J.W, Osinsky A., Chow P.P, Heo Y.W, Norton D.P, Pearton S.J, Dong X.Y, Adelmann C., Palmstrom C.J.  2006.  Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC.  2010.  Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy. Journal of Crystal Growth. 312:2089-2092.