Publications

Found 155 results
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L
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  LIMITS OF REPTATION IN POLYMER MELTS. Physical Review Letters. 53:2145-2148.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  LIMITS OF REPTATION IN POLYMER MELTS. Physical Review Letters. 53:2145-2148.
Kawasaki JK, Timm R, Delaney KT, Lundgren E, Mikkelsen A, Palmstrom CJ.  2011.  Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs. Physical Review Letters. 107
Oogane M., McFadden A.P., Fukuda K., Tsunoda M., Ando Y., Palmstrøm C.J..  2018.  Low magnetic damping and large negative anisotropic magnetoresistance in halfmetallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. Appl. Phys. Lett.. 112, 262407(https://doi.org/10.1063/1.5030341)
Moon-Ho P, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance ohmic contact scheme ( muOmega cm 2) to p-InP. Applied Physics Letters. 70:99-101.
Moon-Ho P, Wang L.C, Cheng J.Y, Fei D, Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn 3P 2/InP heterostructure Ohmic contact to p-InP. Applied Physics Letters. 68:952-4.
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Matsuo S., Kamata H., Baba S., Deacon R.S., Shabani J., Palmstrøm C.J., Tarucha S..  2017.  Magnetic field inducing Zeeman splitting and anomalous conductance reduction of half-integer quantized plateaus in InAs quantum wires. Phys Rev B. 96
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Allen S.J, Tabatabaie N., Palmstrom C.J, Mounier S., Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1990.  MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  MARKER DISPLACEMENT MEASUREMENTS OF POLYMER POLYMER INTERDIFFUSION. Macromolecules. 18:501-507.
Shojaei B., McFadden A.P., Pendharkar M., Lee J.S., Flatté M.E., Palmstrøm C.J..  2018.  Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Phys Rev Materials. 2, 064603(https://doi.org/10.1103/PhysRevMaterials.2.064603)
Chen L.C, Caldwell D.A, Muller T.A, Finstad T.G, Schildgen W., Palmstrom C.J.  1999.  MBE growth and in situ electrical characterization of metal semiconductor structures. Journal of Crystal Growth. 201:146-149.
Palmstrom C.J, Carr D.M, Dong J.W, Dong X., Lu J., Ludge K., McKernan S., Schultz B.D, Shih T.C, Xie J.Q et al..  2002.  MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures. 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607). :117-18.
Dong J.W, Lu J., Xie J.Q, Chen L.C, James R.D, McKernan S., Palmstrom C.J.  2001.  MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs. Physica E. 10:428-432.
Makowski JD, Anderson BD, Chang WS, Saarinen MJ, Palmstrom CJ, Talghader JJ.  2010.  Mechanical Construction of Semiconductor Band Gaps. Ieee Journal of Quantum Electronics. 46:1261-1267.
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.
Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Dong J.W, Chen L.C, Palmstrom C.J, James R.D, McKernan S..  1999.  Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs. Applied Physics Letters. 75:1443-1445.
Lu J., Dong J.W, Xie J.Q, McKernan S., Palmstrom C.J, Xin Y..  2003.  Molecular-beam-epitaxy growth of ferromagnetic Ni2MnGe on GaAs(001). Applied Physics Letters. 83:2393-2395.
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Moon-Ho P, Wang L.C, Fei D, Clawson A., Lau S.S, Cheng J.Y, Hwang D.M, Palmstrom C.J.  1995.  Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.

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