Found 293 results
[ Author(Desc)] Title Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
Farrell H.H, LaViolette R.A, Schultz B.D, Ludge K., Palmstrom C.J.  2003.  Self-assembled CoAs nanostructures. Journal of Vacuum Science & Technology B. 21:1760-1764.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Feigl L., Schultz B.D., Ohya S., Ouellette D.G., Kozhanov A., Palmstrøm C.J..  2013.  Structural and transport properties of epitaxial PrNiO3 thin films grown by molecular beam epitaxy. Journal of Crystal Growth. 366:51-54.
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Fowler D.E, Gyulai J., Palmstrom C..  1983.  ELECTRON INELASTIC MEAN FREE-PATH (IMFP) IN SINGLE-CRYSTAL BEO BY RUTHERFORD BACKSCATTERING (RBS) AND AUGER-ELECTRON SPECTROSCOPY (AES). Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:1021-1025.
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Garlid E.S, Hu Q.O, Geppert C., Chan M.K, Palmstrom C.J, Crowell P.A.  2011.  Electrical measurement of the spin Hall effects in Fe/In xGa 1-xAs heterostructures. 2011 69th Annual Device Research Conference (DRC). :155-8.
Garlid E.S, Hu Q.O, Chan M.K, Palmstrom C.J, Crowell P.A.  2010.  Electrical Measurement of the Direct Spin Hall Effect in Fe/InxGa1-xAs Heterostructures. Physical Review Letters. 105
Garrison K.C, Palmstrom C.J, Bartynski R.A.  1989.  Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434
Gilbert-Corder S.N., Kawasaki J.K., Palmstrøm C.J, Krzyzanowska H.T., Tolk N.H..  2015.  Effects of nanoscale embedded Schottky barriers on carrier dynamics in ErAs:GaAs composite systems. Physical Review B. 92,134303
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  Ion beam analysis of diffusion in polymer melts. Electronic Packaging Materials Science. Materials Research Society Symposia Proceedings. :265-70.
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  LIMITS OF REPTATION IN POLYMER MELTS. Physical Review Letters. 53:2145-2148.
Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  MARKER DISPLACEMENT MEASUREMENTS OF POLYMER POLYMER INTERDIFFUSION. Macromolecules. 18:501-507.
Gyulai J., Fastow R., Kavanagh K., Thompson M.O, Palmstrom C.J, Hewett C.A, Mayer J.W.  1983.  Crystallization of amorphous silicon films by pulsed ion beam annealing. Laser-Solid Interactions and Transient Thermal Processing of Materials. :455-60.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Harrington S.D., Sharan A., Rice A.D., Logan J.A., McFadden A.P., Pendharkar M., Pennachio D.J., Wilson N.S., Gui Z., Janotti A. et al..  2017.  Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions. Appl. Phys. Lett.. 111, 061605
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Hilton J.L, Schultz B.D, Palmstrom C.J.  2007.  Growth temperature dependence of Mn/GaAs surfaces and interfaces. Journal of Applied Physics. 102
Hilton J.L, Schultz B.D, McKernan S., Spanton S.M, Evans M.MR, Palmstrom C.J.  2005.  Phase behavior of thin film Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 23:1752-1758.
Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J.  2004.  Interfacial reactions of Mn/GaAs thin films. Applied Physics Letters. 84:3145-3147.