Found 293 results
Author Title Type [ Year(Asc)]
LeBeau JM, Hu QO, Palmstrom CJ, Stemmer S.  2008.  Atomic structure of postgrowth annealed epitaxial Fe/(001) GaAs interfaces. Applied Physics Letters. 93
Choi S.G, Aspnes D.E, Stoute N.A, Kim Y.D, Kim H.J, Chang Y.C, Palmstrom C.J.  2008.  Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. Physica Status Solidi a-Applications and Materials Science. 205:884-887.
Chengtao Y, Pechan M.J, Srivastava S., Palmstrom C.J, Biegaslski M., Brooks C., Schlom D..  2008.  Ferromagnetic resonance in ferromagnetic/ferroelectric Fe/BaTiO 3/SrTiO 3(001). Journal of Applied Physics. 103:07B108-1-3.
Yu C, Pechan MJ, Srivastava S, Palmstrom CJ, Biegaslski M, Brooks C, Schlom D.  2008.  Ferromagnetic resonance in ferromagnetic/ferroelectric Fe/BaTiO(3)/SrTiO(3)(001). Journal of Applied Physics. 103
Crooker S.A, Smith D.L, Palmstrom C.J, Crowell P.A.  2008.  Imaging spin injection and spin transport in semiconductors. 2008 Quantum Electronics and Laser Science Conference (QELS). :1pp.-1pp..
Makowski J.D, Saarinen M.J, Palmstrom C.J, Talghader J.J.  2008.  Impact of an air barrier on the electron states of etch-released quantum heterostructures. 2008 IEEE/LEOS Internationall Conference on Optical MEMs and Nanophotonics. :184-5.
Park S., Fitzsimmons M.R, Majkrzak C.F, Schultz B.D, Palmstrom C.J.  2008.  The influence of growth temperature and annealing on the magnetization depth profiles across ferromagnetic/semiconductor interfaces. Journal of Applied Physics. 104
Choi S.G, Dattelbaum A.M, Picraux S.T, Srivastava S.K, Palmstrom C.J.  2008.  Optical properties and critical-point energies of BaTiO3 (001) from 1.5 to 5.2 eV. Journal of Vacuum Science & Technology B. 26:1718-1722.
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92:091914-1-3.
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Choi S.G, Palmstrom C.J, Kim Y.D, Aspnes D.E, Kim H.J, Chang Y-C.  2007.  Dielectric functions and electronic structure of InAsxP1-x films on InP. Applied Physics Letters. 91
Lou X, Adelmann C, Crooker SA, Garlid ES, Zhang J, Reddy K.SMadhuka, Flexner SD, Palmstrom CJ, Crowell PA.  2007.  Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Physics. 3:197-202.
Hilton J.L, Schultz B.D, Palmstrom C.J.  2007.  Growth temperature dependence of Mn/GaAs surfaces and interfaces. Journal of Applied Physics. 102
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Palmstrom C.J, Choi S.G, Schultz B.D, Wang Y.Q.  2007.  Molecular beam epitaxy of Sc xEr 1-xSb on InAs(100). Journal of Crystal Growth. 303:433-7.
Choi S.G, Schultz B.D, Wang Y.Q, Palmstrom C.J.  2007.  Molecular beam epitaxy of ScxEr1-xSb on InAs(100). Journal of Crystal Growth. 303:433-437.
Crooker S.A, Furis M., Lou X., Crowell P.A, Smith D.L, Adelmann C., Palmstrom C.J.  2007.  Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices. Journal of Applied Physics. 101
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76