Publications

Found 276 results
Author Title Type [ Year(Asc)]
2006
Lou X., Adelmann C., Furis M., Crooker S.A, Palmstrom C.J, Crowell P.A.  2006.  Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. Physical Review Letters. 96
Schultz B.D, Palmstrom C.J.  2006.  Embedded assembly mechanism of stable metal nanocrystals on semiconductor surfaces. Physical Review B. 73
Schultz B.D, Choi S.G, Palmstrom C.J.  2006.  Embedded growth mode of thermodynamically stable metallic nanoparticles on III-V semiconductors. Applied Physics Letters. 88
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Chengtao Y, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: a study in Co 2MnGa (001). Journal of Applied Physics. 99:8J109-1-3.
Yu C.T, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: A study in Co2MnGa (001). Journal of Applied Physics. 99
Xie J.Q, Dong J.W, Osinsky A., Chow P.P, Heo Y.W, Norton D.P, Pearton S.J, Dong X.Y, Adelmann C., Palmstrom C.J.  2006.  Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Adelmann C., Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J, Lou X., Chiang H.S, Crowell P.A.  2006.  Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89
Palmstrom C..  2006.  Spintronics. IEEE Signal Processing Magazine. 23:94-6.
Palmstrom C.  2006.  Spintronics. Ieee Signal Processing Magazine. 23:96-+.
2005
Choi S.G, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV. Journal of Applied Physics. 98
Adelmann C., Xie J.Q, Palmstrom C.J, Strand J., Lou X., Wang J., Crowell P.A.  2005.  Effects of doping profile and post-growth annealing on spin injection from Fe into (AI,Ga)As heterostructures. Journal of Vacuum Science & Technology B. 23:1747-1751.
Xie J.Q, Lu J., Dong J.W, Dong X.Y, Shih T.C, McKernan S., Palmstrom C.J.  2005.  Effects of growth temperature on the structural and magnetic properties of epitaxial Ni2MnIn thin films on InAs(001). Journal of Applied Physics. 97
Strand J., Lou X., Adelmann C., Schultz B.D, Isakovic A.F, Palmstrom C.J, Crowell P.A.  2005.  Electron spin dynamics and hyperfine interactions in Fe/Al0.1Ga0.9As/GaAs spin injection heterostructures. Physical Review B. 72
Eid K.F, Stone M.B, Maksimov O., Shih T.C, Ku K.C, Fadgen W., Palmstrom C.J, Schiffer P., Samarth N..  2005.  Exchange biasing of the ferrornagnetic semiconductor (Ga,Mn)As by MnO (invited). Journal of Applied Physics. 97
Crooker S.A, Furis M., Lou X., Adelmann C., Smith D.L, Palmstrom C.J, Crowell P.A.  2005.  Imaging spin transport in lateral ferromagnet/semiconductor structures. Science. 309:2191-2195.
Choi S.G, Srivastava S.K, Palmstrom C.J.  2005.  Optical properties of AlGaSb alloys grown by MBE. AIP Conference Proceedings. :125-6.
Choi S.G, Srivastava S.K, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices. Journal of Vacuum Science & Technology B. 23:1149-1153.
Hilton J.L, Schultz B.D, McKernan S., Spanton S.M, Evans M.MR, Palmstrom C.J.  2005.  Phase behavior of thin film Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 23:1752-1758.
Pechan M.J, Yu C.T, Carr D., Palmstrom C.J.  2005.  Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (001) films. Journal of Magnetism and Magnetic Materials. 286:340-345.

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