Publications

Found 370 results
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Journal Article
Dong X.Y, Adelmann C., Xie J.Q, Palmstrom C.J, Lou X., Strand J., Crowell P.A, Barnes J.P, Petford-Long A.K.  2005.  Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures. Applied Physics Letters. 86
Dong X.Y, Lou X., Adelmann C., Strand J., Petford-Long A.K, Crowell P.A, Palmstrom C.J.  2005.  Spin injection from the Heusler alloy Co 2MnGe into Al 0.1Ga 0.9As/GaAs heterostructures. INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference (IEEE Cat. No.05CH37655). :1195-6.
Dong X.Y, Lou X., Adelmann C., Strand J., Petford-Long A.K, Crowell P.A, Palmstrom C.J.  2005.  Spin injection from the Heusler alloy Co 2MnGe into Al 0.1Ga 0.9As/GaAs heterostructures. INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference (IEEE Cat. No.05CH37655). :1195-6.
Adelmann C., Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J, Lou X., Chiang H.S, Crowell P.A.  2006.  Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89
Adelmann C., Lou X., Strand J., Palmstrom C.J, Crowell P.A.  2005.  Spin injection and relaxation in ferromagnet-semiconductor heterostructures. Physical Review B. 71
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Schultz B.D, Marom N., Naveh D., Lou X., Adelmann C., Strand J., Crowell P.A, Kronik L., Palmstrom C.J.  2009.  Spin injection across the Fe/GaAs interface: Role of interfacial ordering. Physical Review B. 80
Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84
Miceli P.F, Weatherwax J., Krentsel T., Palmstrom C.J.  1996.  Specular and diffuse reflectivity from thin films containing misfit dislocations. Physica B. 221:230-234.
Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.
Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.
Kawasaki J.K, Schultz B.D, Palmstrom C.J.  2013.  Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface. Physical Review B. 87(035419)
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Kawasaki J.K., Sharan A., Johansson L.I.M., Hjort M., Timm R., Thiagarajan B., Schultz B.D., Mikkelsen A., Janotti A., Palmstrøm C.J..  2018.  A simple electron counting model for half-Heusler surfaces. Science Advances. 4, eaar5832
Hung L.S, Kennedy E.F, Palmstrom C.J, Olowolafe J.O, Mayer J.W, Rhodes H..  1985.  SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS. Applied Physics Letters. 47:236-238.
Dong J.W, Xie J.Q, Lu J., Adelmann C., Palmstrom C.J, Cui J., Pan Q., Shield T.W, James R.D, McKernan S..  2004.  Shape memory and ferromagnetic shape memory effects in single-crystal Ni2MnGa thin films. Journal of Applied Physics. 95:2593-2600.
Dong J.W, Xie J.Q, Lu J., Adelmann C., Palmstrom C.J, Cui J., Pan Q., Shield T.W, James R.D, McKernan S..  2004.  Shape memory and ferromagnetic shape memory effects in single-crystal Ni2MnGa thin films. Journal of Applied Physics. 95:2593-2600.
Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.
Farrell H.H, LaViolette R.A, Schultz B.D, Ludge K., Palmstrom C.J.  2003.  Self-assembled CoAs nanostructures. Journal of Vacuum Science & Technology B. 21:1760-1764.
Lam W.K, Tan Y.T, Palmstrom C., Mayer J.W.  1985.  RUTHERFORD BACKSCATTERING DETERMINATION OF IODIDE DISTRIBUTION IN AG(BR,I) SHEET CRYSTAL. Journal of Photographic Science. 33:219-220.
Tanaka M., Tsuda M., Nishinaga T., Palmstrom C.J.  1996.  Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs. Applied Physics Letters. 68:84-86.

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