Publications

Found 84 results
Author Title [ Type(Desc)] Year
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Journal Article
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Moon-Ho P, Wang L.C, Fei D, Clawson A., Lau S.S, Cheng J.Y, Hwang D.M, Palmstrom C.J.  1995.  Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Logan J.A., Patel S.J., Harrington S.D., Polley C.M., Schultz B.D., Balasubramanian T., Janotti A., Mikkelsen A., Palmstrøm C.J..  2016.  Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films. Nature Communications. 7, 11993
Marshall E.D, Lau S.S, Palmstrom C.J, Sands T., Schwartz C.L, Schwarz S.A, Harbison J.P, Florez L.T.  1989.  Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
Chen W., Kahn A., Mangat P.S, Soukiassian P., Florez L.T, Harbison J.P, Palmstrom C.J.  1993.  PB/GAAS(100) - BAND BENDING, ADATOM-INDUCED GAP STATES AND SURFACE DIPOLE. Journal of Vacuum Science & Technology B. 11:1571-1574.
Hilton J.L, Schultz B.D, McKernan S., Spanton S.M, Evans M.MR, Palmstrom C.J.  2005.  Phase behavior of thin film Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 23:1752-1758.
Hugsted B., Tafto J., Finstad T.G, Palmstrom C.J.  1993.  POLARITY OF SMALL (111)GAAS DOMAINS ON (100)SC0.32ER0.68AS FORMED DURING MOLECULAR-BEAM EPITAXIAL-GROWTH. Applied Physics Letters. 63:2499-2501.
Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.
Hung L.S, Kennedy E.F, Palmstrom C.J, Olowolafe J.O, Mayer J.W, Rhodes H..  1985.  SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS. Applied Physics Letters. 47:236-238.
Kawasaki J.K., Sharan A., Johansson L.I.M., Hjort M., Timm R., Thiagarajan B., Schultz B.D., Mikkelsen A., Janotti A., Palmstrøm C.J..  2018.  A simple electron counting model for half-Heusler surfaces. Science Advances. 4, eaar5832
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84
Adelmann C., Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J, Lou X., Chiang H.S, Crowell P.A.  2006.  Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89
Sands T., Palmstrom C.J, Harbison J.P, Keramidas V.G, Tabatabaie N., Cheeks T.L, Ramesh R., Silberberg Y..  1990.  Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
Sands T., Harbison J.P, Schwarz S.A, Palmstrom C.J, Tabatabaie N., Chan W.K, Keramidas V.G.  1988.  STRUCTURE AND STABILITY OF ULTRATHIN NIAL FILMS IN (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES. Journal of Electronic Materials. 17:S23-S23.
Palmstrom C.J, Chase E.W, Hwang D.M, Harbison J.P, Chang C.C, Kaplan A.S, Nazar L..  1988.  STUDIES OF CO/GA1-XALXAS INTERFACES FABRICATED IN ULTRAHIGH-VACUUM. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 6:1456-1461.
Palmstrom C.J, Chase E.W, Hwang D.M, Harbison J.P, Chang C.C, Kaplan A.S, Nazar L..  1988.  STUDIES OF CO/GA1-XALXAS INTERFACES FABRICATED IN ULTRAHIGH-VACUUM. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 6:1456-1461.
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Patel S.J., Logan J.A., Harrington S.D., Schultz B.D, Palmstrøm C.J.  2016.  Surface reconstructions and transport of epitaxial PtLuSb(001) thin films grown by MBE. J Cryst Growth. 436, 145

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