Publications

Found 70 results
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Journal Article
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
Yu A.J, Galvin G.J, Palmstrom C.J, Mayer J.W.  1985.  PHASE FORMATION AND REACTION-KINETICS IN THE THIN-FILM CO/GAAS SYSTEM. Applied Physics Letters. 47:934-936.
Palmstrom C.J, Gyulai J., Mayer J.W.  1983.  PHASE-SEPARATION IN INTERACTIONS OF TANTALUM CHROMIUM-ALLOY ON SI. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:452-454.
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1986.  POLYDISPERSITY EFFECTS ON DIFFUSION IN POLYMERS - CONCENTRATION PROFILES OF D-POLYSTYRENE MEASURED BY FORWARD RECOIL SPECTROMETRY. Journal of Polymer Science Part B-Polymer Physics. 24:1-9.
Liu X., Ramu A.T, Bowers J.E, Palmstrom C.J, Burke P.G, Lu H., Gossard A.C.  2011.  Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications. Journal of Crystal Growth. 316:56-59.
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Yoneda J., Otsuka T., Takakura T., Pioro-Ladrière M., Brunner R., Lu H., Nakajima T., Obata T., Palmstrøm C.J, Gossard A.C et al..  2015.  Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots. Applied Physics Express. 8, 084401
Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.
Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.
Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.
Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Kramer D.E, Chen L.C, Palmstrom C.J, Gerberich W.W.  1998.  Substrate effects on yield point phenomena in epitaxial thin films. Fundamentals of Nanondentation and Nanotribology. Symposium. :89-94.
Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76
Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ.  2013.  Surface-Mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures. Nano Letters. 13(6)
Rodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C. et al..  2008.  Technology development & design for 22 nm InGaAs/InP-channel MOSFETs. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM). :6pp.-6pp..
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO.  2012.  Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites. Journal of Applied Physics. 111
Krafcsik I., Palmstrom C.J, Gyulai J., Colgan E., Zingu E., Mayer J.W.  1983.  THIN-FILM INTERACTIONS OF AL AND AL (CU) ON W AND TI. Journal of the Electrochemical Society. 130:C102-C102.
Harrington S.D., Sharan A., Rice A.D., Logan J.A., McFadden A.P., Pendharkar M., Pennachio D.J., Wilson N.S., Gui Z., Janotti A. et al..  2017.  Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions. Appl. Phys. Lett.. 111, 061605

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