Publications

Found 220 results
Author Title [ Type(Desc)] Year
Filters: Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Yamada I., Palmstrom C.J, Kennedy E., Mayer J.W, Inokawa H., Takagi T..  1985.  Epitaxy of aluminium films on semiconductors by ionized cluster beam. Layered Structures, Epitaxy, and Interfaces Symposium. :401-6.
Palmstrom C.J.  1995.  EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.
Allen S.J, Tabatabaie N., Palmstrom C.J, Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1989.  ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
Schultz B.D, Farrell H.H, Evans M.MR, Ludge K., Palmstrom C.J.  2002.  ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 20:1600-1608.
Eid K.F, Stone M.B, Ku K.C, Maksimov O., Schiffer P., Samarth N., Shih T.C, Palmstrom C.J.  2004.  Exchange biasing of the ferromagnetic semiconductor Ga1-xMnxAs. Applied Physics Letters. 85:1556-1558.
Eid K.F, Stone M.B, Maksimov O., Shih T.C, Ku K.C, Fadgen W., Palmstrom C.J, Schiffer P., Samarth N..  2005.  Exchange biasing of the ferrornagnetic semiconductor (Ga,Mn)As by MnO (invited). Journal of Applied Physics. 97
Bogaerts R., Herlach F., Dekeyser A., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1996.  Experimental determination of the Fermi surface of thin Sc1-xErxAs epitaxial layers in pulsed magnetic fields. Physical Review B. 53:15951-15963.
Bogaerts R., Vanesch A., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1993.  EXPERIMENTAL-STUDY OF THE ENERGY-BAND STRUCTURE OF SC1-XERXAS LAYERS IN PULSED MAGNETIC-FIELDS. Physica B. 184:232-235.
Jong-In S, Hong W.P, Palmstrom C.J, Van Der Gaag B.P, Bae CKyung.  1993.  A f T=175 GHz carbon-doped base InP/InGaAs HBT. International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3). :787-90.
Palmstrom C.J, Garrison K.C, Fimland B.O, Sands T., Bartynski R.A.  1989.  Fabrication and electrical properties of MBE grown metal-gallium and metal-arsenic compounds on Ga 1-xAl xAs. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :583-8.
Chengtao Y, Pechan M.J, Srivastava S., Palmstrom C.J, Biegaslski M., Brooks C., Schlom D..  2008.  Ferromagnetic resonance in ferromagnetic/ferroelectric Fe/BaTiO 3/SrTiO 3(001). Journal of Applied Physics. 103:07B108-1-3.
Yu C.T, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: A study in Co2MnGa (001). Journal of Applied Physics. 99
Chengtao Y, Pechan M.J, Carr D., Palmstrom C.J.  2006.  Ferromagnetic resonance in the stripe domain state: a study in Co 2MnGa (001). Journal of Applied Physics. 99:8J109-1-3.
Dong J.W, Chen L.C, McKernan S., Xie J.Q, Figus M.T, James R.D, Palmstrom C.J.  2000.  Formation and characterization of single crystal Ni 2MnGa thin films. Materials for Smart Systems. Symposium (Materials Research Society Proceedings Vol.604). :297-302.
Farrell H.H, Lu J., Schultz B.D, Denison A.B, Palmstrom C.J.  2001.  GaAs(111)B(root 19X root 19)R23.4 degrees surface reconstruction. Journal of Vacuum Science & Technology B. 19:1597-1605.
Palmstrom C.J, Schwarz S.A, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L.T, Gmitter T.J, Marshall E.D, Lau S.S.  1990.  GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
Wang L.C, Park M.H, Deng F., Clawson A., Lau S.S, Hwang D.M, Palmstrom C.J.  1995.  GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
Schmidt D.R, Ibbetson J.P, Brehmer D.E, Palmstrom C.J, Allen S.J.  1997.  Giant magnetoresistance of self-assembled ErAs islands in GaAs. Magnetic Ultrathin Films, Multilayers and Surfaces - 1997 Symposium. :251-6.
Garrison K.C, Palmstrom C.J, Bartynski R.A.  1989.  Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.
Xie J.Q, Dong J.W, Osinsky A., Chow P.P, Heo Y.W, Norton D.P, Pearton S.J, Dong X.Y, Adelmann C., Palmstrom C.J.  2006.  Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Buschbeck J., Kawasaki J.K, Buehl T.E, Gossard A.C, Palmstrom C.J.  2011.  Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation. Journal of Vacuum Science & Technology B. 29
Palmstrom C.J, Garrison K.C, Mounier S., Sands T., Schwartz C.L, Tabatabaie N., Allen S.J, Gilchrist H.L, Miceli P.F.  1989.  GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 7:747-752.
Zhu J.G, Palmstrom C.J, Carter C.B.  1991.  THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
Czanderna K.K, Morrissey K.J, Palmstrom C.J, Carter C.B, Merrill R.P.  1989.  GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.

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