Publications

Found 220 results
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Filters: Author is Palmstrom, C. J.  [Clear All Filters]
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Jeong H.K, Komesu T., Dowben P.A, Schultz B.D, Palmstrom C.J.  2003.  The plasmons of ErAs(100). Physics Letters A. 316:118-121.
Megrant A., Neill C., Barends R., Chiaro B., Chen Y, Feigl L., Kelly J., Lucero E, Mariantoni M, O'Malley P.JJ et al..  2012.  Planar superconducting resonators with internal quality factors above one million. Applied Physics Letters. 100
Jeong H.K, Komesu T., Yang C.S, Dowben P.A, Schultz B.D, Palmstrom C.J.  2004.  Photoemission forward scattering from ErAs(100)/GaAs(100). Materials Letters. 58:2993-2996.
Palmstrom C.J, Gyulai J., Mayer J.W.  1983.  PHASE-SEPARATION IN INTERACTIONS OF TANTALUM CHROMIUM-ALLOY ON SI. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:452-454.
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92:091914-1-3.
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92
Yu A.J, Galvin G.J, Palmstrom C.J, Mayer J.W.  1985.  PHASE FORMATION AND REACTION-KINETICS IN THE THIN-FILM CO/GAAS SYSTEM. Applied Physics Letters. 47:934-936.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  Phase boundaries between GaAs and other cubic materials. EMAG-MICRO 89. Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference. :411-14vol.1.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  PHASE BOUNDARIES BETWEEN GAAS AND OTHER CUBIC MATERIALS. Institute of Physics Conference Series. :411-414.
Hilton J.L, Schultz B.D, McKernan S., Spanton S.M, Evans M.MR, Palmstrom C.J.  2005.  Phase behavior of thin film Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 23:1752-1758.
Moon-Ho P, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Pd/Zn/Pd ohmic contact to p-InP. IPRM 1996. Eighth International Conference on Indium Phosphide and Related Materials (Cat. No.96CH35930). :350-3.
Chen W., Kahn A., Mangat P.S, Soukiassian P., Florez L.T, Harbison J.P, Palmstrom C.J.  1993.  PB/GAAS(100) - BAND BENDING, ADATOM-INDUCED GAP STATES AND SURFACE DIPOLE. Journal of Vacuum Science & Technology B. 11:1571-1574.
Rowe J.E, Palmstrom C.J.  2000.  Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - 16-20 January 2000 Salt Lake City, Utah - Preface. Journal of Vacuum Science & Technology B. 18:2033-2033.
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Strand J., Isakovic A.F, Lou X., Crowell P.A, Schultz B.D, Palmstrom C.J.  2003.  Nuclear magnetic resonance in a ferromagnet-semiconductor heterostructure. Applied Physics Letters. 83:3335-3337.
Allen S.J, Brehmer D., Palmstrom C.J.  1993.  Novel electronics enabled by rare earth arsenides buried in III-V semiconductors. Rare Earth Doped Semiconductors Symposium. :307-17.
Han C.C, Wang X.Z, Wang L.C, Marshall E.D, Lau S.S, Schwarz S.A, Palmstrom C.J, Harbison J.P, Florez L.T, Potemski R.M et al..  1990.  NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
Moon-Ho P, Wang L.C, Fei D, Clawson A., Lau S.S, Cheng J.Y, Hwang D.M, Palmstrom C.J.  1995.  Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.

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