Publications

Found 370 results
Author Title [ Type(Asc)] Year
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Journal Article
Shabani J., DasSarma S., Palmstrøm C.J.  2014.  An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures. Phys. Rev. B. 90, 161303 (2014).
Lund M.S, Dong J.W, Lu J., Dong X.Y, Palmstrom C.J, Leighton C..  2002.  Anomalous magnetotransport properties of epitaxial full Heusler alloys. Applied Physics Letters. 80:4798-4800.
Suominen H.J., Danon J., Kjaergaard M., Flensberg K., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions. Phys Rev B. 95, 035307
Jeong H.K, Komesu T., Dowben P.A, Schultz B.D, Palmstrom C.J.  2002.  The anomalous effective surface Debye temperature of ErAs (100). Physics Letters A. 302:217-223.
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  ANALYSIS OF DIFFUSION IN POLYMERS BY FORWARD RECOIL SPECTROMETRY. Applied Physics Letters. 45:957-959.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Olowolafe J.O, Palmstrom C.J, Colgan E.G, Mayer J.W.  1985.  AL/TIW REACTION-KINETICS - INFLUENCE OF CU AND INTERFACE OXIDES. Journal of Applied Physics. 58:3440-3443.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.
Eizenberg M., Tu K.N, Palmstrom C.J, Mayer J.W.  1984.  2-STEP AL/TI METALLIZATION TO PTSI/SI STRUCTURES. Applied Physics Letters. 45:905-907.
Conference Proceedings
Preu S., Lu H., Kawasaki J.K., Ouellette D.G., Palmstrom C.J., Sherwin M.S., Gossard A.C..  2014.  THz spectroscopy of self-assembled ErSb nanowire. Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.
Preu S., Lu H., Kawasaki J.K., Ouellette D.G., Palmstrom C.J., Sherwin M.S., Gossard A.C..  2014.  THz spectroscopy of self-assembled ErSb nanowire. Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications.
Book
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.

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