Publications

Found 293 results
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
A
LeBeau JM, Hu QO, Palmstrom CJ, Stemmer S.  2008.  Atomic structure of postgrowth annealed epitaxial Fe/(001) GaAs interfaces. Applied Physics Letters. 93
Shabani J., DasSarma S., Palmstrøm C.J.  2014.  An apparent metal-insulator transition in high-mobility two-dimensional InAs heterostructures. Phys. Rev. B. 90, 161303 (2014).
Lund M.S, Dong J.W, Lu J., Dong X.Y, Palmstrom C.J, Leighton C..  2002.  Anomalous magnetotransport properties of epitaxial full Heusler alloys. Applied Physics Letters. 80:4798-4800.
Suominen H.J., Danon J., Kjaergaard M., Flensberg K., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions. Phys Rev B. 95, 035307
Jeong H.K, Komesu T., Dowben P.A, Schultz B.D, Palmstrom C.J.  2002.  The anomalous effective surface Debye temperature of ErAs (100). Physics Letters A. 302:217-223.
Harmon N.J., Peterson T.A., Geppert C.C., Patel S.J., Palmstrøm C.J, Crowell P.A., Flatté M.E..  2015.  Anisotropic spin relaxation in n-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei. Phys Rev B. 92, 140201
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  ANALYSIS OF DIFFUSION IN POLYMERS BY FORWARD RECOIL SPECTROMETRY. Applied Physics Letters. 45:957-959.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (ALXGA1-X)0.47IN0.53AS - GROWTH AND CHARACTERIZATION. Institute of Physics Conference Series. :173-180.
Olowolafe J.O, Palmstrom C.J, Colgan E.G, Mayer J.W.  1985.  AL/TIW REACTION-KINETICS - INFLUENCE OF CU AND INTERFACE OXIDES. Journal of Applied Physics. 58:3440-3443.
Stanley C.R, Welch D., Wicks G.W, Wood C.EC, Palmstrom C., Pollack F.H, Parayanthal P..  1983.  (Al xGa 1-x) 0.47In 0.53As; growth and characterization. Gallium Arsenide and Related Compounds, 1982. Tenth International Symposium on Gallium Arsenide and Related Compounds. :173-80.

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