Publications

Found 6 results
Author Title [ Type(Desc)] Year
Filters: Author is Gossard, Arthur C.  [Clear All Filters]
Journal Article
Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC.  2012.  Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature. Journal of Electronic Materials. 41:948-953.
Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrom CJ.  2011.  Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs. Journal of Vacuum Science & Technology B. 29
Buehl TE, Palmstrom CJ, Gossard AC.  2011.  Embedded ErAs nanorods on GaAs(n11) substrates by molecular beam epitaxy. Journal of Vacuum Science & Technology B. 29
Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC.  2010.  Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy. Journal of Crystal Growth. 312:2089-2092.
Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ.  2013.  Surface-Mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures. Nano Letters. 13(6)
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO.  2012.  Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites. Journal of Applied Physics. 111