Found 293 results
Author Title [ Type(Desc)] Year
Journal Article
Isakovic A.F, Berezovsky J., Crowell P.A, Chen L.C, Carr D.M, Schultz B.D, Palmstrom C.J.  2001.  Control of magnetic anisotropy in Fe1-xCox films on vicinal GaAs and Sc1-yEryAs surfaces. Journal of Applied Physics. 89:6674-6676.
Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC.  2012.  Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature. Journal of Electronic Materials. 41:948-953.
Makowski J.D, Anderson B.D, Chan W.S, Saarinen M.J, Palmstrom C.J, Talghader J.J.  2009.  Coupling of quantum states with mechanical heterostructures. 15th International Conference on Solid-State Sensors, Actuators and Microsystems. Transducers 2009. :489-92.
Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrom CJ.  2011.  Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs. Journal of Vacuum Science & Technology B. 29
Hjort M., Kratzer P., Lehmann S., Patel S.J., Dick K.A., Palmstrøm C.J., Timm R., Mikkelsen A..  2017.  Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires. Nano Letters. 17
Gyulai J., Fastow R., Kavanagh K., Thompson M.O, Palmstrom C.J, Hewett C.A, Mayer J.W.  1983.  Crystallization of amorphous silicon films by pulsed ion beam annealing. Laser-Solid Interactions and Transient Thermal Processing of Materials. :455-60.
Hong B.WP, Song J.I, Palmstrom C.J, Vandergaag B., Chough K.B, Hayes J.R.  1994.  DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Transactions on Electron Devices. 41:19-25.
Shojaei B., O'Malley P.JJ, Shabani J., Roushan P., Schultz B.D, Lutchyn R.M., Nayak C., Martinis J.M., Palmstrom C.J.  2016.  Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. Physical Review B. 93, 075302
Choi S.G, Palmstrom C.J, Kim Y.D, Aspnes D.E, Kim H.J, Chang Y-C.  2007.  Dielectric functions and electronic structure of InAsxP1-x films on InP. Applied Physics Letters. 91
Choi S.G, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV. Journal of Applied Physics. 98
Choi S.G, Aspnes D.E, Stoute N.A, Kim Y.D, Kim H.J, Chang Y.C, Palmstrom C.J.  2008.  Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. Physica Status Solidi a-Applications and Materials Science. 205:884-887.
Duszak R., Palmstrom C.J, Florez L.T, Yang Y.N, Weaver J.H.  1992.  DRAMATIC WORK FUNCTION VARIATIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(100) SURFACES. Journal of Vacuum Science & Technology B. 10:1891-1897.
Liu C., Patel S.J., Peterson T.A., Geppert C.C., Christie K.D., Stecklein G., Palmstrom C.J, Crowell P.A.  2016.  Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance. Nature Communications. 7, 10296
Strand J., Schultz B.D, Isakovic A.F, Palmstrom C.J, Crowell P.A.  2003.  Dynamic nuclear polarization by electrical spin injection in ferromagnet-semiconductor heterostructures. Physical Review Letters. 91
Meeker M.A, Magill B.A, Merritt T.R, Bhowmick M., McCutcheon K., Khodaparast G.A, Tischler J.G, McGill S., Choi S.G, Palmstrøm C.J.  2013.  Dynamics of photoexcited carriers and spins in InAsP ternary alloys. Applied Physics Letters. 102:-.
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
Kim J., Kim H., M. Kilic E, Gayner C., Koltun R., Park H., Soon A., Bowers J., Palmstrøm C., Kim W..  2018.  Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms. Journal of Applied Physics. 123, 245103(
Yang Y.N, Luo Y.S, Weaver J.H, Florez L.T, Palmstrom C.J.  1992.  EFFECTS OF ANNEALING ON THE SURFACE-MORPHOLOGY OF DECAPPED GAAS(001). Applied Physics Letters. 61:1930-1932.
Adelmann C., Xie J.Q, Palmstrom C.J, Strand J., Lou X., Wang J., Crowell P.A.  2005.  Effects of doping profile and post-growth annealing on spin injection from Fe into (AI,Ga)As heterostructures. Journal of Vacuum Science & Technology B. 23:1747-1751.
Xie J.Q, Lu J., Dong J.W, Dong X.Y, Shih T.C, McKernan S., Palmstrom C.J.  2005.  Effects of growth temperature on the structural and magnetic properties of epitaxial Ni2MnIn thin films on InAs(001). Journal of Applied Physics. 97
Gilbert-Corder S.N., Kawasaki J.K., Palmstrøm C.J, Krzyzanowska H.T., Tolk N.H..  2015.  Effects of nanoscale embedded Schottky barriers on carrier dynamics in ErAs:GaAs composite systems. Physical Review B. 92,134303
Liu C., Boyko Y., Geppert C.C, Christie K.D, Stecklein G., Patel S.J, Palmstrøm C.J, Crowell P.A.  2014.  Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance. Applied Physics Letters. 105
Lou X., Adelmann C., Furis M., Crooker S.A, Palmstrom C.J, Crowell P.A.  2006.  Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. Physical Review Letters. 96
Lou X, Adelmann C, Crooker SA, Garlid ES, Zhang J, Reddy K.SMadhuka, Flexner SD, Palmstrom CJ, Crowell PA.  2007.  Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Physics. 3:197-202.