Publications

Found 370 results
Author Title [ Type(Desc)] Year
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Journal Article
Allen S.J, Derosa F., Palmstrom C.J, Zrenner A..  1991.  BAND-STRUCTURE, QUANTUM CONFINEMENT, AND EXCHANGE SPLITTING IN SC1-XERXAS EPITAXIAL LAYERS BURIED IN GAAS. Physical Review B. 43:9599-9609.
Crooker S.A, Garlid E.S, Chantis A.N, Smith D.L, Reddy K.SM, Hu Q.O, Kondo T., Palmstrom C.J, Crowell P.A.  2009.  Bias-controlled sensitivity of ferromagnet/semiconductor electrical spin detectors. Physical Review B. 80
Zhu J.G, Carter C.B, Palmstrom C.J, Garrison K.C.  1989.  CHARACTERIZATION OF THE COGA/GAAS INTERFACE. Applied Physics Letters. 55:39-41.
Palmstrom C.J, Chase E.W, Harbison J.P, Chang C.C, Kaplan A.S, Hwang D.M.  1987.  CO CONTACTS TO GAAS AND GA1-XALXAS - REACTIONS AND ELECTRICAL-PROPERTIES. Journal of the Electrochemical Society. 134:C116-C117.
Palmstrom C.J, Chang C.C, Yu A., Galvin G.J, Mayer J.W.  1987.  CO/GAAS INTERFACIAL REACTIONS. Journal of Applied Physics. 62:3755-3762.
Farrell H.H, Schultz B.D, Palmstrom C.J.  2009.  Comment on "High-resolution core-level photoemission study on GaAs(111)B surfaces" J. Appl. Phys. 101, 043516 (2007). Journal of Applied Physics. 105
Mills P.J, Palmstrom C.J, Kramer E.J.  1986.  CONCENTRATION PROFILES OF NON-FICKIAN DIFFUSANTS IN GLASSY-POLYMERS BY RUTHERFORD BACKSCATTERING SPECTROMETRY. Journal of Materials Science. 21:1479-1486.
Palmstrom C.J, Morgan D.V, Howes M.J.  1978.  CONTACT DEGRADATION OF GAAS TRANSFERRED ELECTRON DEVICES. Nuclear Instruments & Methods. 150:305-311.
Palmstrom C.J, Morgan D.V, Howes M.J.  1977.  CONTACT-DEGRADATION STUDIES ON GAAS TRANSFERRED-ELECTRON DEVICES USING A FOCUSED BACKSCATTERING TECHNIQUE. Electronics Letters. 13:504-505.
Isakovic A.F, Berezovsky J., Crowell P.A, Chen L.C, Carr D.M, Schultz B.D, Palmstrom C.J.  2001.  Control of magnetic anisotropy in Fe1-xCox films on vicinal GaAs and Sc1-yEryAs surfaces. Journal of Applied Physics. 89:6674-6676.
Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC.  2012.  Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature. Journal of Electronic Materials. 41:948-953.
Makowski J.D, Anderson B.D, Chan W.S, Saarinen M.J, Palmstrom C.J, Talghader J.J.  2009.  Coupling of quantum states with mechanical heterostructures. 15th International Conference on Solid-State Sensors, Actuators and Microsystems. Transducers 2009. :489-92.
Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrom CJ.  2011.  Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs. Journal of Vacuum Science & Technology B. 29
Hjort M., Kratzer P., Lehmann S., Patel S.J., Dick K.A., Palmstrøm C.J., Timm R., Mikkelsen A..  2017.  Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires. Nano Letters. 17
Hjort M., Kratzer P., Lehmann S., Patel S.J., Dick K.A., Palmstrøm C.J., Timm R., Mikkelsen A..  2017.  Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowires. Nano Letters. 17
Gyulai J., Fastow R., Kavanagh K., Thompson M.O, Palmstrom C.J, Hewett C.A, Mayer J.W.  1983.  Crystallization of amorphous silicon films by pulsed ion beam annealing. Laser-Solid Interactions and Transient Thermal Processing of Materials. :455-60.
Hong B.WP, Song J.I, Palmstrom C.J, Vandergaag B., Chough K.B, Hayes J.R.  1994.  DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS. Ieee Transactions on Electron Devices. 41:19-25.
Shojaei B., O'Malley P.JJ, Shabani J., Roushan P., Schultz B.D, Lutchyn R.M., Nayak C., Martinis J.M., Palmstrom C.J.  2016.  Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas. Physical Review B. 93, 075302
Choi S.G, Palmstrom C.J, Kim Y.D, Aspnes D.E, Kim H.J, Chang Y-C.  2007.  Dielectric functions and electronic structure of InAsxP1-x films on InP. Applied Physics Letters. 91
Choi S.G, Palmstrom C.J, Kim Y.D, Cooper S.L, Aspnes D.E.  2005.  Dielectric functions of AlxGa1-xSb (0.00 <= x <= 0.39) alloys from 1.5 to 6.0 eV. Journal of Applied Physics. 98
Choi S.G, Aspnes D.E, Stoute N.A, Kim Y.D, Kim H.J, Chang Y.C, Palmstrom C.J.  2008.  Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. Physica Status Solidi a-Applications and Materials Science. 205:884-887.
Duszak R., Palmstrom C.J, Florez L.T, Yang Y.N, Weaver J.H.  1992.  DRAMATIC WORK FUNCTION VARIATIONS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS(100) SURFACES. Journal of Vacuum Science & Technology B. 10:1891-1897.
Liu C., Patel S.J., Peterson T.A., Geppert C.C., Christie K.D., Stecklein G., Palmstrom C.J, Crowell P.A.  2016.  Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance. Nature Communications. 7, 10296
Liu C., Patel S.J., Peterson T.A., Geppert C.C., Christie K.D., Stecklein G., Palmstrom C.J, Crowell P.A.  2016.  Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance. Nature Communications. 7, 10296
Liu C., Patel S.J., Peterson T.A., Geppert C.C., Christie K.D., Stecklein G., Palmstrom C.J, Crowell P.A.  2016.  Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance. Nature Communications. 7, 10296

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