Publications

Found 293 results
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
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Kramer D.E, Chen L.C, Palmstrom C.J, Gerberich W.W.  1998.  Substrate effects on yield point phenomena in epitaxial thin films. Fundamentals of Nanondentation and Nanotribology. Symposium. :89-94.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  STUDY OF MOLECULAR-BEAM EPITACTIC GROWTH OF GAAS ON (100) SC(X)E(1-X)AS/GAAS. Journal of Applied Physics. 77:4312-4320.
Shojaei B., McFadden A., Shabani J., Schultz B.D, Palmstrøm C.J.  2015.  Studies of scattering mechanisms in gate tunable InAs/(Al,Ga)Sb two dimensional electron gases. Appl. Phys. Lett.. 106, 222101
Schwarz S.A, Mei P., Hwang D.M, Schwartz C.L, Venkatesan T., Palmstrom C.J, Stoffel N.G, Bhat R..  1989.  Studies of In 0.53Ga 0.47As/InP superlattice mixing and conversion. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :233-8.
Palmstrom C.J, Chase E.W, Hwang D.M, Harbison J.P, Chang C.C, Kaplan A.S, Nazar L..  1988.  STUDIES OF CO/GA1-XALXAS INTERFACES FABRICATED IN ULTRAHIGH-VACUUM. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 6:1456-1461.
Sands T., Harbison J.P, Schwarz S.A, Palmstrom C.J, Tabatabaie N., Chan W.K, Keramidas V.G.  1988.  STRUCTURE AND STABILITY OF ULTRATHIN NIAL FILMS IN (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES. Journal of Electronic Materials. 17:S23-S23.
Ludge K., Schultz B.D, Vogt P., Evans M.MR, Braun W., Palmstrom C.J, Richter W., Esser N..  2002.  Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4X4) surfaces. Journal of Vacuum Science & Technology B. 20:1591-1599.
Feigl L., Schultz B.D., Ohya S., Ouellette D.G., Kozhanov A., Palmstrøm C.J..  2013.  Structural and transport properties of epitaxial PrNiO3 thin films grown by molecular beam epitaxy. Journal of Crystal Growth. 366:51-54.
Rice A.D., Kawasaki J.K., Verma N., Pennachio D.J., Schultz B.D., Palmstrøm C.J..  2017.  Structural and electronic properties of molecular beam epitaxially grown Ni1+xTiSn films. Journal of Crystal Growth. 467
Palmstrom C.J, Cheeks T.L, Nahory R.E, Wilkens B.J, Martinez J.A, Miceli P.F, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
Sands T., Palmstrom C.J, Harbison J.P, Keramidas V.G, Tabatabaie N., Cheeks T.L, Ramesh R., Silberberg Y..  1990.  Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
Palmstrom C..  2006.  Spintronics. IEEE Signal Processing Magazine. 23:94-6.
Palmstrom C.  2006.  Spintronics. Ieee Signal Processing Magazine. 23:96-+.
Adelmann C., Schultz B.D, Dong X.Y, Palmstrom C.J, Lou X., Strand J., Xie J.Q, Park S., Fitzsimmons M.R, Crowell P.A.  2004.  Spin injection into semiconductors: the role of the Fe/Al x Ga 1-xAs interface. 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM (IEEE Cat. No.04CH37589). :505-10.
Dong X.Y, Adelmann C., Xie J.Q, Palmstrom C.J, Lou X., Strand J., Crowell P.A, Barnes J.P, Petford-Long A.K.  2005.  Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures. Applied Physics Letters. 86
Dong X.Y, Lou X., Adelmann C., Strand J., Petford-Long A.K, Crowell P.A, Palmstrom C.J.  2005.  Spin injection from the Heusler alloy Co 2MnGe into Al 0.1Ga 0.9As/GaAs heterostructures. INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference (IEEE Cat. No.05CH37655). :1195-6.
Adelmann C., Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J, Lou X., Chiang H.S, Crowell P.A.  2006.  Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89
Adelmann C., Lou X., Strand J., Palmstrom C.J, Crowell P.A.  2005.  Spin injection and relaxation in ferromagnet-semiconductor heterostructures. Physical Review B. 71
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Schultz B.D, Marom N., Naveh D., Lou X., Adelmann C., Strand J., Crowell P.A, Kronik L., Palmstrom C.J.  2009.  Spin injection across the Fe/GaAs interface: Role of interfacial ordering. Physical Review B. 80
Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84
Miceli P.F, Weatherwax J., Krentsel T., Palmstrom C.J.  1996.  Specular and diffuse reflectivity from thin films containing misfit dislocations. Physica B. 221:230-234.
Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.
Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.
Kawasaki J.K, Schultz B.D, Palmstrom C.J.  2013.  Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface. Physical Review B. 87(035419)

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