Found 35 results
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Journal Article
Miceli P.F, Weatherwax J., Krentsel T., Palmstrom C.J.  1996.  Specular and diffuse reflectivity from thin films containing misfit dislocations. Physica B. 221:230-234.
Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.
Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.
Kawasaki J.K, Schultz B.D, Palmstrom C.J.  2013.  Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface. Physical Review B. 87(035419)
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Kawasaki J.K., Sharan A., Johansson L.I.M., Hjort M., Timm R., Thiagarajan B., Schultz B.D., Mikkelsen A., Janotti A., Palmstrøm C.J..  2018.  A simple electron counting model for half-Heusler surfaces. Science Advances. 4, eaar5832
Hung L.S, Kennedy E.F, Palmstrom C.J, Olowolafe J.O, Mayer J.W, Rhodes H..  1985.  SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS. Applied Physics Letters. 47:236-238.
Dong J.W, Xie J.Q, Lu J., Adelmann C., Palmstrom C.J, Cui J., Pan Q., Shield T.W, James R.D, McKernan S..  2004.  Shape memory and ferromagnetic shape memory effects in single-crystal Ni2MnGa thin films. Journal of Applied Physics. 95:2593-2600.
Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.
Farrell H.H, LaViolette R.A, Schultz B.D, Ludge K., Palmstrom C.J.  2003.  Self-assembled CoAs nanostructures. Journal of Vacuum Science & Technology B. 21:1760-1764.