Publications

Found 6 results
Author Title Type [ Year(Desc)]
Filters: Author is Farrell, H. H.  [Clear All Filters]
1990
Farrell H.H, Palmstrom C.J.  1990.  REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY. Journal of Vacuum Science & Technology B. 8:903-907.
2001
Farrell H.H, Lu J., Schultz B.D, Denison A.B, Palmstrom C.J.  2001.  GaAs(111)B(root 19X root 19)R23.4 degrees surface reconstruction. Journal of Vacuum Science & Technology B. 19:1597-1605.
2002
Schultz B.D, Farrell H.H, Evans M.MR, Ludge K., Palmstrom C.J.  2002.  ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 20:1600-1608.
2003
Farrell H.H, LaViolette R.A, Schultz B.D, Ludge K., Palmstrom C.J.  2003.  Self-assembled CoAs nanostructures. Journal of Vacuum Science & Technology B. 21:1760-1764.
2006
Farrell H.H, Hilton J.L, Schultz B.D, Palmstrom C.J.  2006.  Nonequilibrium phases in epitaxial Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 24:2018-2023.
2009
Farrell H.H, Schultz B.D, Palmstrom C.J.  2009.  Comment on "High-resolution core-level photoemission study on GaAs(111)B surfaces" J. Appl. Phys. 101, 043516 (2007). Journal of Applied Physics. 105