Publications
BACKSIDE SECONDARY ION MASS-SPECTROMETRY INVESTIGATION OF OHMIC AND SCHOTTKY CONTACTS ON GAAS. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 8:2079-2083.
.
1990. GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
.
1990. GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
.
1995. A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.
.
1988. Low resistance Zn 3P 2/InP heterostructure Ohmic contact to p-InP. Applied Physics Letters. 68:952-4.
.
1996. Low resistance Zn3P2/InP heterostructure ohmic contact to p-InP. Applied Physics Letters. 68:952-954.
.
1996. Non-Au based shallow low resistance ohmic contacts on p-InP. Conference Proceedings. Seventh International Conference on Indium Phosphide and Related Materials (Cat. No.95CH35720). :672-3.
.
1995. NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 68:5714-5718.
.
1990. Ohmic contact formation mechanism in the Ge/Pd/n-GaAs system. Chemistry and defects in semiconductor heterostructures Symposium. :163-8.
.
1989. Pd/Zn/Pd ohmic contact to p-InP. IPRM 1996. Eighth International Conference on Indium Phosphide and Related Materials (Cat. No.96CH35930). :350-3.
.
1996.