Publications
EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
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1992. EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
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1990. New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
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1992. NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
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1992. Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
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1990. STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.
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1990.