Publications

Found 220 results
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Schultz B.D, Marom N., Naveh D., Lou X., Adelmann C., Strand J., Crowell P.A, Kronik L., Palmstrom C.J.  2009.  Spin injection across the Fe/GaAs interface: Role of interfacial ordering. Physical Review B. 80
Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84
Miceli P.F, Weatherwax J., Krentsel T., Palmstrom C.J.  1996.  Specular and diffuse reflectivity from thin films containing misfit dislocations. Physica B. 221:230-234.
Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.
Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.
Kawasaki J.K, Schultz B.D, Palmstrom C.J.  2013.  Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface. Physical Review B. 87(035419)
Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.
Hung L.S, Kennedy E.F, Palmstrom C.J, Olowolafe J.O, Mayer J.W, Rhodes H..  1985.  SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS. Applied Physics Letters. 47:236-238.
Dong J.W, Xie J.Q, Lu J., Adelmann C., Palmstrom C.J, Cui J., Pan Q., Shield T.W, James R.D, McKernan S..  2004.  Shape memory and ferromagnetic shape memory effects in single-crystal Ni2MnGa thin films. Journal of Applied Physics. 95:2593-2600.
Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.
Farrell H.H, LaViolette R.A, Schultz B.D, Ludge K., Palmstrom C.J.  2003.  Self-assembled CoAs nanostructures. Journal of Vacuum Science & Technology B. 21:1760-1764.
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Tanaka M., Tsuda M., Nishinaga T., Palmstrom C.J.  1996.  Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs. Applied Physics Letters. 68:84-86.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Palmstrom C.J, Wilkens B..  1995.  RESONANT-TUNNELING THROUGH ERAS SEMIMETAL QUANTUM-WELLS. Applied Physics Letters. 67:1268-1270.
Zhang K., Brehmer D.E, Allen S.J, Palmstrom C.J.  1995.  RESONANT-TUNNELING IN SEMI-METAL/SEMICONDUCTOR, ERAS/(AL,GA)AS, HETEROSTRUCTURES. Compound Semiconductors 1994. :845-850.
Brehmer D.E, Zhang K., Schwarz C.J, Chau S.P, Allen S.J, Ibbetson J.P, Zhang J.P, Petukhov A.G, Palmstrom C.J, Wilkens B..  1996.  Resonant tunneling through rare earth arsenide, semimetal quantum wells. Solid-State Electronics. 40:241-244.
Brehmer D.E, Ibbetson J.P, Kai Z, Petukhov A.G, Schwarz C.J, Chau S.P, Allen S.J, Palmstrom C.J, Zhang J.P, Wilkens B..  1995.  Resonant tunneling through (Al,Ga)As/ErAs/(Al,Ga)As, semi-metal quantum wells. Semiconductor Heteroepitaxy. Growth, Characterization and Device Applications. :672-5.
Pechan M.J, Yu C.T, Carr D., Palmstrom C.J.  2005.  Remarkable strain-induced magnetic anisotropy in epitaxial Co2MnGa (001) films. Journal of Magnetism and Magnetic Materials. 286:340-345.
Farrell H.H, Palmstrom C.J.  1990.  REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY. Journal of Vacuum Science & Technology B. 8:903-907.
Kavanagh K.L, Chen S.H, Palmstrom C.J, Carter C.B, Mukherjee S.D.  1984.  RBS and TEM analysis of Ta silicides on GaAs. Thin Films and Interfaces II. Proceedings of the Symposium. :143-8.
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Bogaerts R., De Keyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen, Jr. S.J.  1995.  Quantum oscillations in the Hall effect of thin Sc 1-xEr xAs epitaxial layers buried in GaAs. 11th International Conference, High Magnetic Fields in the Physics of Semiconductors. :706-9.

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