Adelmann C., Schultz B.D, Dong X.Y, Palmstrom C.J, Lou X., Strand J., Xie J.Q, Park S., Fitzsimmons M.R, Crowell P.A.  2004.  Spin injection into semiconductors: the role of the Fe/Al x Ga 1-xAs interface. 2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM (IEEE Cat. No.04CH37589). :505-10.

Adelmann C., Lou X., Strand J., Palmstrom C.J, Crowell P.A.  2005.  Spin injection and relaxation in ferromagnet-semiconductor heterostructures. Physical Review B. 71

Adelmann C., Hilton J.L, Schultz B.D, McKernan S., Palmstrom C.J, Lou X., Chiang H.S, Crowell P.A.  2006.  Spin injection from perpendicular magnetized ferromagnetic delta-MnGa into (Al,Ga)As heterostructures. Applied Physics Letters. 89

Bogaerts R., Dekeyser A., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Brehmer D., Allen S.J.  1994.  SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS. Solid-State Electronics. 37:789-792.

Dong J.W, Xie J.Q, Lu J., Adelmann C., Palmstrom C.J, Cui J., Pan Q., Shield T.W, James R.D, McKernan S..  2004.  Shape memory and ferromagnetic shape memory effects in single-crystal Ni2MnGa thin films. Journal of Applied Physics. 95:2593-2600.

Dong X.Y, Lou X., Adelmann C., Strand J., Petford-Long A.K, Crowell P.A, Palmstrom C.J.  2005.  Spin injection from the Heusler alloy Co 2MnGe into Al 0.1Ga 0.9As/GaAs heterostructures. INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference (IEEE Cat. No.05CH37655). :1195-6.

Dong X.Y, Adelmann C., Xie J.Q, Palmstrom C.J, Lou X., Strand J., Crowell P.A, Barnes J.P, Petford-Long A.K.  2005.  Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures. Applied Physics Letters. 86

Farrell H.H, LaViolette R.A, Schultz B.D, Ludge K., Palmstrom C.J.  2003.  Self-assembled CoAs nanostructures. Journal of Vacuum Science & Technology B. 21:1760-1764.

Feigl L., Schultz B.D., Ohya S., Ouellette D.G., Kozhanov A., Palmstrøm C.J..  2013.  Structural and transport properties of epitaxial PrNiO3 thin films grown by molecular beam epitaxy. Journal of Crystal Growth. 366:51-54.

Fitzsimmons M.R, Kirby B.J, Hengartner N.W, Trouw F., Erickson M.J, Flexner S.D, Kondo T., Adelmann C., Palmstrom C.J, Crowell P.A et al..  2007.  Suppression of nuclear polarization near the surface of optically pumped GaAs. Physical Review B. 76

Hu Q.O, Garlid E.S, Crowell P.A, Palmstrom C.J.  2011.  Spin accumulation near Fe/GaAs (001) interfaces: The role of semiconductor band structure. Physical Review B. 84

Hung L.S, Kennedy E.F, Palmstrom C.J, Olowolafe J.O, Mayer J.W, Rhodes H..  1985.  SILICIDE FORMATION BY THERMAL ANNEALING OF NI AND PD ON HYDROGENATED AMORPHOUS-SILICON FILMS. Applied Physics Letters. 47:236-238.

Kadow C., Fleischer S.B, Ibbetson J.P, Bowers J.E, Gossard A.C, Dong J.W, Palmstrom C.J.  1999.  Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics. Applied Physics Letters. 75:3548-3550.

Kawasaki J.K, Schultz B.D, Palmstrom C.J.  2013.  Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface. Physical Review B. 87(035419)

Kawasaki J.K., Sharan A., Johansson L.I.M., Hjort M., Timm R., Thiagarajan B., Schultz B.D., Mikkelsen A., Janotti A., Palmstrøm C.J..  2018.  A simple electron counting model for half-Heusler surfaces. Science Advances. 4, eaar5832

Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ.  2013.  Surface-Mediated Tunable Self-Assembly of Single Crystal Semimetallic ErSb/GaSb Nanocomposite Structures. Nano Letters. 13(6)

Kramer D.E, Chen L.C, Palmstrom C.J, Gerberich W.W.  1998.  Substrate effects on yield point phenomena in epitaxial thin films. Fundamentals of Nanondentation and Nanotribology. Symposium. :89-94.

Ludge K., Schultz B.D, Vogt P., Evans M.MR, Braun W., Palmstrom C.J, Richter W., Esser N..  2002.  Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4X4) surfaces. Journal of Vacuum Science & Technology B. 20:1591-1599.

Miceli P.F, Weatherwax J., Krentsel T., Palmstrom C.J.  1996.  Specular and diffuse reflectivity from thin films containing misfit dislocations. Physica B. 221:230-234.

Palmstrom C.J, Chase E.W, Hwang D.M, Harbison J.P, Chang C.C, Kaplan A.S, Nazar L..  1988.  STUDIES OF CO/GA1-XALXAS INTERFACES FABRICATED IN ULTRAHIGH-VACUUM. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 6:1456-1461.

Palmstrom C.  2006.  Spintronics. Ieee Signal Processing Magazine. 23:96-+.

Palmstrom C..  2006.  Spintronics. IEEE Signal Processing Magazine. 23:94-6.

Palmstrom C.J, Galvin G.J, Schwarz S.A, De Cooman B.C, Mayer J.W.  1986.  Solid phase epitaxial growth of Ge on GaAs. Layered Structures and Epitaxy Symposium. :67-72.

Palmstrom C.J, Galvin G.J.  1985.  SOLID-PHASE EPITAXY OF DEPOSITED AMORPHOUS-GE ON GAAS. Applied Physics Letters. 47:815-817.

Palmstrom C.J, Cheeks T.L, Nahory R.E, Wilkens B.J, Martinez J.A, Miceli P.F, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.