Publications

Found 18 results
Author Title [ Type(Desc)] Year
Filters: First Letter Of Title is P and Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Rowe J.E, Palmstrom C.J.  2000.  Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces - 16-20 January 2000 Salt Lake City, Utah - Preface. Journal of Vacuum Science & Technology B. 18:2033-2033.
Chen W., Kahn A., Mangat P.S, Soukiassian P., Florez L.T, Harbison J.P, Palmstrom C.J.  1993.  PB/GAAS(100) - BAND BENDING, ADATOM-INDUCED GAP STATES AND SURFACE DIPOLE. Journal of Vacuum Science & Technology B. 11:1571-1574.
Moon-Ho P, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Pd/Zn/Pd ohmic contact to p-InP. IPRM 1996. Eighth International Conference on Indium Phosphide and Related Materials (Cat. No.96CH35930). :350-3.
Hilton J.L, Schultz B.D, McKernan S., Spanton S.M, Evans M.MR, Palmstrom C.J.  2005.  Phase behavior of thin film Mn/GaAs interfacial reactions. Journal of Vacuum Science & Technology B. 23:1752-1758.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  PHASE BOUNDARIES BETWEEN GAAS AND OTHER CUBIC MATERIALS. Institute of Physics Conference Series. :411-414.
Zhu J.G, Palmstrom C.J, Carter C.B.  1990.  Phase boundaries between GaAs and other cubic materials. EMAG-MICRO 89. Proceedings of the Institute of Physics Electron Microscopy and Analysis Group and Royal Microscopical Society Conference. :411-14vol.1.
Yu A.J, Galvin G.J, Palmstrom C.J, Mayer J.W.  1985.  PHASE FORMATION AND REACTION-KINETICS IN THE THIN-FILM CO/GAAS SYSTEM. Applied Physics Letters. 47:934-936.
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92
Schultz B.D, Adelmann C., Dong X.Y, McKernan S., Palmstrom C.J.  2008.  Phase formation in the thin film Fe/GaAs system. Applied Physics Letters. 92:091914-1-3.
Palmstrom C.J, Gyulai J., Mayer J.W.  1983.  PHASE-SEPARATION IN INTERACTIONS OF TANTALUM CHROMIUM-ALLOY ON SI. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1:452-454.
Jeong H.K, Komesu T., Yang C.S, Dowben P.A, Schultz B.D, Palmstrom C.J.  2004.  Photoemission forward scattering from ErAs(100)/GaAs(100). Materials Letters. 58:2993-2996.
Megrant A., Neill C., Barends R., Chiaro B., Chen Y, Feigl L., Kelly J., Lucero E, Mariantoni M, O'Malley P.JJ et al..  2012.  Planar superconducting resonators with internal quality factors above one million. Applied Physics Letters. 100
Jeong H.K, Komesu T., Dowben P.A, Schultz B.D, Palmstrom C.J.  2003.  The plasmons of ErAs(100). Physics Letters A. 316:118-121.
Hugsted B., Tafto J., Finstad T.G, Palmstrom C.J.  1993.  POLARITY OF SMALL (111)GAAS DOMAINS ON (100)SC0.32ER0.68AS FORMED DURING MOLECULAR-BEAM EPITAXIAL-GROWTH. Applied Physics Letters. 63:2499-2501.
Mills P.J, Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1986.  POLYDISPERSITY EFFECTS ON DIFFUSION IN POLYMERS - CONCENTRATION PROFILES OF D-POLYSTYRENE MEASURED BY FORWARD RECOIL SPECTROMETRY. Journal of Polymer Science Part B-Polymer Physics. 24:1-9.
Liu X., Ramu A.T, Bowers J.E, Palmstrom C.J, Burke P.G, Lu H., Gossard A.C.  2011.  Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications. Journal of Crystal Growth. 316:56-59.
Palmstrom C.J, Fastow R..  1983.  Pulsed ion beam interface melting of PtCr and CrTa alloys on Si structures. Laser-Solid Interactions and Transient Thermal Processing of Materials. :715-20.
Brat T., Eizenberg M., Fastow R., Palmstrom C.J, Mayer J.W.  1985.  PULSED PROTON-BEAM ANNEALING OF IR AND IRXV100-X THIN-FILMS ON SILICON. Journal of Applied Physics. 57:264-269.