Publications

Found 25 results
Author Title [ Type(Desc)] Year
Filters: First Letter Of Title is M and Author is Palmstrom, C. J.  [Clear All Filters]
Book
Palmstrom C.J, Morgan D.V.  1985.  Metallizations for GaAs devices and circuits. Gallium arsenide materials, devices, and circuits. :195-261.
Journal Article
Pechan M.J, Compton R.L, Bennett D., Chen L.C, Palmstrom C.J, Allen S.J.  2001.  Magnetic anisotropy and interlayer coupling in Fe0.5Co0.5(100) films on GaAs(100). Journal of Applied Physics. 89:7514-7516.
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B (Condensed Matter and Materials Physics). 70:104406-1-10.
Park S., Fitzsimmons M.R, Dong X.Y, Schultz B.D, Palmstrom C.J.  2004.  Magnetic degradation of an FeCo/GaAs interface. Physical Review B. 70
Pan Q., Dong J.W, Palmstrom C.J, Cui J., James R.D.  2002.  Magnetic domain observations of freestanding single crystal patterned Ni2MnGa films. Journal of Applied Physics. 91:7812-7814.
Qi P, Dong J.W, Palmstrom C.J, Cui J., James R.D.  2002.  Magnetic domain observations of freestanding single crystal patterned Ni 2MnGa films. Journal of Applied Physics. 91:7812-14.
Allen S.J, Derosa F., Gilchrist H.L, Harbison J.P, Leadbeater M., Miceli P.F, Palmstrom C.J, Ramesh R., Sands T., Zrenner A..  1991.  MAGNETOTRANSPORT IN MAGNETIC EPITAXIAL METAL LAYERS BURIED IN (GA,AL)AS HETEROSTRUCTURES. Journal of Applied Physics. 69:6117-6117.
Allen S.J, Tabatabaie N., Palmstrom C.J, Mounier S., Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1990.  MAGNETOTRANSPORT IN ULTRATHIN ERAS EPITAXIAL LAYERS BURIED IN GAAS. Surface Science. 228:13-15.
Bogaerts R., Vanbockstal L., Herlach F., Peeters F.M, Derosa F., Palmstrom C.J, Allen S.J.  1992.  MAGNETOTRANSPORT MEASUREMENTS ON THIN SC1-XERXAS EPITAXIAL-FILMS IN PULSED MAGNETIC-FIELDS. Physica B. 177:425-429.
Green P.F, Palmstrom C.J, Mayer J.W, Kramer E.J.  1985.  MARKER DISPLACEMENT MEASUREMENTS OF POLYMER POLYMER INTERDIFFUSION. Macromolecules. 18:501-507.
Buschbeck J., Kawasaki J.K, Kozhanov A., James R.D, Palmstrom C.J.  2011.  Martensite transformation of epitaxial Ni-Ti films. Applied Physics Letters. 98
Chen L.C, Caldwell D.A, Muller T.A, Finstad T.G, Schildgen W., Palmstrom C.J.  1999.  MBE growth and in situ electrical characterization of metal semiconductor structures. Journal of Crystal Growth. 201:146-149.
Palmstrom C.J, Carr D.M, Dong J.W, Dong X., Lu J., Ludge K., McKernan S., Schultz B.D, Shih T.C, Xie J.Q et al..  2002.  MBE growth and interfacial reaction control of ferromagnetic metal/GaAs heterostructures. 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607). :117-18.
Dong J.W, Lu J., Xie J.Q, Chen L.C, James R.D, McKernan S., Palmstrom C.J.  2001.  MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs. Physica E. 10:428-432.
Zhu J.G, Carter C.B, Palmstrom C.J, Mounier S..  1990.  MICROSTRUCTURE OF EPITACTICALLY GROWN GAAS/ERAS/GAAS. Applied Physics Letters. 56:1323-1325.
Song J.I, Hong W.P, Palmstrom C.J, Hayes J.R, Chough K.B, Vandergaag B.P.  1993.  MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:1893-1894.
Song J.I, Hong W.P, Palmstrom C.J, Vandergaag B.P, Chough K.B.  1994.  MILLIMETER-WAVE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME. Electronics Letters. 30:456-457.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  MISFIT DISLOCATIONS AT ERAS/GAAS HETEROJUNCTIONS. Acta Metallurgica Et Materialia. 43:4171-4177.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  MISFIT DISLOCATIONS AT THE COGA/GAAS INTERFACE. Institute of Physics Conference Series. :659-664.
Zhu J.G, Palmstrom C.J, Garrison K.C, Carter C.B.  1989.  Misfit dislocations at the CoGa/GaAs interface. Microscopy of Semiconducting Materials 1989. Proceedings of the Royal Microscopical Society Conference. :659-64.
Dong J.W, Chen L.C, Palmstrom C.J, James R.D, McKernan S..  1999.  Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs. Applied Physics Letters. 75:1443-1445.
Palmstrom C.J, Choi S.G, Schultz B.D, Wang Y.Q.  2007.  Molecular beam epitaxy of Sc xEr 1-xSb on InAs(100). Journal of Crystal Growth. 303:433-7.
Choi S.G, Schultz B.D, Wang Y.Q, Palmstrom C.J.  2007.  Molecular beam epitaxy of ScxEr1-xSb on InAs(100). Journal of Crystal Growth. 303:433-437.
Lu J., Dong J.W, Xie J.Q, McKernan S., Palmstrom C.J, Xin Y..  2003.  Molecular-beam-epitaxy growth of ferromagnetic Ni2MnGe on GaAs(001). Applied Physics Letters. 83:2393-2395.
Luo Y.S, Yang Y.N, Weaver J.H, Florez L.T, Palmstrom C.J.  1994.  MULTIORIENTATIONAL GROWTH OF AL ON GAAS(001) STUDIED WITH SCANNING-TUNNELING-MICROSCOPY. Physical Review B. 49:1893-1899.