Publications

Found 12 results
Author Title [ Type(Asc)] Year
Filters: First Letter Of Title is L and Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Park M.H, Wang L.C, Cheng J.Y, Deng F., Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn3P2/InP heterostructure ohmic contact to p-InP. Applied Physics Letters. 68:952-954.
Moon-Ho P, Wang L.C, Cheng J.Y, Fei D, Lau S.S, Palmstrom C.J.  1996.  Low resistance Zn 3P 2/InP heterostructure Ohmic contact to p-InP. Applied Physics Letters. 68:952-4.
Park M.H, Wang L.C, Palmstrom C.J.  1997.  Low resistance Pd/Zn/Pd ohmic contact to p-In(0.82)Ga0.18As(0.39)P(0.61). Journal of Applied Physics. 81:2720-2724.
Park M.H, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance Ohmic contact scheme (similar to mu Omega cm(2)) to p-InP. Applied Physics Letters. 70:99-101.
Moon-Ho P, Wang L.C, Cheng J.Y, Palmstrom C.J.  1997.  Low resistance ohmic contact scheme ( muOmega cm 2) to p-InP. Applied Physics Letters. 70:99-101.
Furis M., Smith D.L, Kos S., Garlid E.S, Reddy K.SM, Palmstrom C.J, Crowell P.A, Crooker S.A.  2007.  Local Hanle-effect studies of spin drift and diffusion in n : GaAs epilayers and spin-transport devices. New Journal of Physics. 9
Green P.F, Mills P.J, Palmstrom C.J, Mayer J.W, Kramer E.J.  1984.  LIMITS OF REPTATION IN POLYMER MELTS. Physical Review Letters. 53:2145-2148.
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
Zhu J.G, Palmstrom C.J, Carter C.B.  1995.  LATTICE-MATCHED GAAS/SC0.3ER0.7AS/GAAS HETEROSTRUCTURES GROWN ON VARIOUS SUBSTRATE ORIENTATIONS. Journal of Applied Physics. 77:4321-4328.
Miceli P.F, Moyers K.W, Palmstrom C.J.  1991.  Lattice relaxation of ErAs/GaAs: an X-ray scattering study. Evolution of Thin-Film and Surface Microstructure Symposium. :579-84.
Chen S.H, Carter C.B, Palmstrom C.J, Ohashi T..  1986.  Lateral reactions of GaAs with Ni studied by transmission electron microscopy. Thin Films - Interfaces and Phenomena. Part of the Fall 1985 Meeting of the Materials Research Society. :361-6.
Chen S.H, Carter C.B, Palmstrom C.J.  1988.  LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY. Journal of Materials Research. 3:1385-1396.