Found 7 resultsAuthor [ Title] Type Year
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Heusler Compounds and Spintronics. Progress in Crystal Growth and Characterization of Materials. 62. 2016.
A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.. 1988.
HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:666-667.. 1993.
High-resolution imaging of CoGa/GaAs and ErAs/GaAs interfaces. Atomic Scale Structure of Interfaces Symposium. :89-94.. 1990.
Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-9.. 2004.
Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-539.. 2004.
Hyperfine interactions and spin transport in ferromagnet-semiconductor heterostructures. Physical Review B. 80. 2009.