Found 6 resultsAuthor [ Title] Type Year
Filters: First Letter Of Title is H and Author is Palmstrom, C. J. [Clear All Filters]
A high depth resolution backside secondary ion mass spectrometry technique used for studying metal/GaAs contacts. Advanced Surface Processes for Optoelectronics: Symposium. :283-8.. 1988.
HIGH-PERFORMANCE INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY. Electronics Letters. 29:666-667.. 1993.
High-resolution imaging of CoGa/GaAs and ErAs/GaAs interfaces. Atomic Scale Structure of Interfaces Symposium. :89-94.. 1990.
Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-9.. 2004.
Hybridization between 4f-5d states in ErAs(100). Surface Review and Letters. 11:531-539.. 2004.
Hyperfine interactions and spin transport in ferromagnet-semiconductor heterostructures. Physical Review B. 80. 2009.