Publications

Found 22 results
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Farrell H.H, Lu J., Schultz B.D, Denison A.B, Palmstrom C.J.  2001.  GaAs(111)B(root 19X root 19)R23.4 degrees surface reconstruction. Journal of Vacuum Science & Technology B. 19:1597-1605.
Shabani J., McFadden A.P, Shojaei B., Palmstrøm C.J.  2014.  Gating of high-mobility InAs metamorphic heterostructures. Appl. Phys. Lett. 105
Palmstrom C.J, Schwarz S.A, Yablonovitch E., Harbison J.P, Schwartz C.L, Florez L.T, Gmitter T.J, Marshall E.D, Lau S.S.  1990.  GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION. Journal of Applied Physics. 67:334-339.
Wang L.C, Park M.H, Deng F., Clawson A., Lau S.S, Hwang D.M, Palmstrom C.J.  1995.  GE/PD (ZN) OHMIC CONTACT SCHEME ON P-INP BASED ON THE SOLID-PHASE REGROWTH PRINCIPLE. Applied Physics Letters. 66:3310-3312.
Schmidt D.R, Ibbetson J.P, Brehmer D.E, Palmstrom C.J, Allen S.J.  1997.  Giant magnetoresistance of self-assembled ErAs islands in GaAs. Magnetic Ultrathin Films, Multilayers and Surfaces - 1997 Symposium. :251-6.
Podpirka A.A., Shabani J., Katz M.B., Twigg M.E., Mack S., Palmstrom C.J., Bennett B.R..  2015.  Growth and characterization of (110) InAs quantum well metamorphic heterostructures. Journal of Applied Physics. 117, 245313
Garrison K.C, Palmstrom C.J, Bartynski R.A.  1989.  Growth and characterization of single crystal epitaxial CoGa on MBE grown III-V semiconductors. Advances in Materials, Processing and Devices in III-V Compound Semiconductors Symposium. :613-18.
Cassels LE, Buehl TE, Burke PG, Palmstrom CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO.  2011.  Growth and characterization of TbAs:GaAs nanocomposites. Journal of Vacuum Science & Technology B. 29
Kawasaki JK, Johansson LIM, Schultz BD, Palmstrøm CJ.  2014.  Growth and transport properties of epitaxial lattice matched half Heusler CoTiSb/InAlAs/InP(001) heterostructures. Applied Physics Letters. 104
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Xie J.Q, Dong J.W, Osinsky A., Chow P.P, Heo Y.W, Norton D.P, Pearton S.J, Dong X.Y, Adelmann C., Palmstrom C.J.  2006.  Growth of a-plane ZnO thin films on r-plane sapphire by plasma-assisted MBE. Progress in Semiconductor Materials V-Novel Materials and Electronic and Optoelectronic Applications (Materials Research Society Symposium Proceedings Vol.891). :407-12.
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC.  2010.  Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy. Journal of Crystal Growth. 312:2089-2092.
Buschbeck J., Kawasaki J.K, Buehl T.E, Gossard A.C, Palmstrom C.J.  2011.  Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation. Journal of Vacuum Science & Technology B. 29
Palmstrom C.J, Garrison K.C, Mounier S., Sands T., Schwartz C.L, Tabatabaie N., Allen S.J, Gilchrist H.L, Miceli P.F.  1989.  GROWTH OF EPITAXIAL RARE-EARTH ARSENIDE (100)GAAS AND GAAS RARE-EARTH ARSENIDE (100)GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 7:747-752.
Zhu J.G, Palmstrom C.J, Carter C.B.  1991.  THE GROWTH OF GAAS ON SC0.3ER0.7AS EPILAYERS. Institute of Physics Conference Series. :419-422.
Czanderna K.K, Morrissey K.J, Palmstrom C.J, Carter C.B, Merrill R.P.  1989.  GROWTH OF GAMMA-ALUMINA ON CRYSTALLOGRAPHICALLY DISTINCT ALUMINUM SUBSTRATES. Journal of Materials Science. 24:515-522.
Palmstrom C.J, Vandergaag B.P, Song J.I, Hong W.P, Schwarz S.A, Novak S..  1994.  GROWTH OF HEAVY CARBON-DOPED GALNAS LATTICE-MATCHED TO INP BY CHEMICAL BEAM EPITAXY. Applied Physics Letters. 64:3139-3141.
Logan J.A., Brown-Heft T.L., Harrington S.D., Wilson N.S., McFadden A.P., Rice A.D., Pendharkar M., Palmstrøm C.J..  2017.  Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films. Journal of Applied Physics. 121
Dong X.Y, Dong J.W, Xie J.Q, Shih T.C, McKernan S., Leighton C., Palmstrom C.J.  2003.  Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy. Journal of Crystal Growth. 254:384-389.
Hilton J.L, Schultz B.D, Palmstrom C.J.  2007.  Growth temperature dependence of Mn/GaAs surfaces and interfaces. Journal of Applied Physics. 102
Miceli P.F, Palmstrom C.J, Moyers K.W.  1992.  GROWTH-MORPHOLOGY OF EPITAXIAL ERAS/GAAS BY X-RAY EXTENDED RANGE SPECULAR REFLECTIVITY. Applied Physics Letters. 61:2060-2062.