Found 28 results
Author Title [ Type(Desc)] Year
Filters: First Letter Of Title is E and Author is Palmstrom, C. J.  [Clear All Filters]
Journal Article
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
Yang Y.N, Luo Y.S, Weaver J.H, Florez L.T, Palmstrom C.J.  1992.  EFFECTS OF ANNEALING ON THE SURFACE-MORPHOLOGY OF DECAPPED GAAS(001). Applied Physics Letters. 61:1930-1932.
Adelmann C., Xie J.Q, Palmstrom C.J, Strand J., Lou X., Wang J., Crowell P.A.  2005.  Effects of doping profile and post-growth annealing on spin injection from Fe into (AI,Ga)As heterostructures. Journal of Vacuum Science & Technology B. 23:1747-1751.
Xie J.Q, Lu J., Dong J.W, Dong X.Y, Shih T.C, McKernan S., Palmstrom C.J.  2005.  Effects of growth temperature on the structural and magnetic properties of epitaxial Ni2MnIn thin films on InAs(001). Journal of Applied Physics. 97
Lou X., Adelmann C., Furis M., Crooker S.A, Palmstrom C.J, Crowell P.A.  2006.  Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. Physical Review Letters. 96
Garlid E.S, Hu Q.O, Chan M.K, Palmstrom C.J, Crowell P.A.  2010.  Electrical Measurement of the Direct Spin Hall Effect in Fe/InxGa1-xAs Heterostructures. Physical Review Letters. 105
Garlid E.S, Hu Q.O, Geppert C., Chan M.K, Palmstrom C.J, Crowell P.A.  2011.  Electrical measurement of the spin Hall effects in Fe/In xGa 1-xAs heterostructures. 2011 69th Annual Device Research Conference (DRC). :155-8.
Strand J., Lou X., Adelmann C., Schultz B.D, Isakovic A.F, Palmstrom C.J, Crowell P.A.  2005.  Electron spin dynamics and hyperfine interactions in Fe/Al0.1Ga0.9As/GaAs spin injection heterostructures. Physical Review B. 72
Komesu T., Jeong H.K, Choi J., Borca C.N, Dowben P.A, Petukhov A.G, Schultz B.D, Palmstrom C.J.  2003.  Electronic structure of ErAs(100). Physical Review B. 67
Schultz B.D, Palmstrom C.J.  2006.  Embedded assembly mechanism of stable metal nanocrystals on semiconductor surfaces. Physical Review B. 73
Schultz B.D, Choi S.G, Palmstrom C.J.  2006.  Embedded growth mode of thermodynamically stable metallic nanoparticles on III-V semiconductors. Applied Physics Letters. 88
Palmstrom C.J, Fimland B.O, Sands T., Garrison K.C, Bartynski R.A.  1989.  EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY. Journal of Applied Physics. 65:4753-4758.
Chen L.C, Dong J.W, Schultz B.D, Palmstrom C.J, Berezovsky J., Isakovic A., Crowell P.A, Tabat N..  2000.  Epitaxial ferromagnetic metal/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 18:2057-2062.
Shih T.C, Xie J.Q, Dong J.W, Dong X.Y, Srivastava S., Adelmann C., McKernan S., James R.D, Palmstrom C.J.  2006.  Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa films. Ferroelectrics. 342:35-+.
Dong J.W, Chen L.C, Xie J.Q, Muller T.AR, Carr D.M, Palmstrom C.J, McKernan S., Pan Q., James R.D.  2000.  Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers. Journal of Applied Physics. 88:7357-7359.
Xie J.Q, Dong J.W, Lu J., Palmstrom C.J, McKernan S..  2001.  Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs. Applied Physics Letters. 79:1003-1005.
Cheeks T.L, Sands T., Nahory R.E, Harbison J.P, Palmstrom C.J, Gilchrist H.L, Ramesh R., Keramidas V.G.  1990.  EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
Tanaka M., Palmstrom C.J, Tsuda M., Nishinaga T..  1996.  Epitaxial semimetal (ErAs)/semiconductor (III-V) heterostructures: Negative differential resistance in novel resonant tunneling structures with an ErAs quantum well. Journal of Magnetism and Magnetic Materials. 156:276-278.
Palmstrom C.J, Tabatabaie N., Allen S.J.  1988.  EPITAXIAL-GROWTH OF ERAS ON (100)GAAS. Applied Physics Letters. 53:2608-2610.
Sands T., Harbison J.P, Chan W.K, Schwarz S.A, Chang C.C, Palmstrom C.J, Keramidas V.G.  1988.  EPITAXIAL-GROWTH OF GAAS/NIAL/GAAS HETEROSTRUCTURES. Applied Physics Letters. 52:1216-1218.
Yamada I., Palmstrom C.J, Kennedy E., Mayer J.W, Inokawa H., Takagi T..  1985.  Epitaxy of aluminium films on semiconductors by ionized cluster beam. Layered Structures, Epitaxy, and Interfaces Symposium. :401-6.
Palmstrom C.J.  1995.  EPITAXY OF DISSIMILAR MATERIALS. Annual Review of Materials Science. 25:389-415.
Allen S.J, Tabatabaie N., Palmstrom C.J, Hull G.W, Sands T., Derosa F., Gilchrist H.L, Garrison K.C.  1989.  ERAS EPITAXIAL LAYERS BURIED IN GAAS - MAGNETOTRANSPORT AND SPIN-DISORDER SCATTERING. Physical Review Letters. 62:2309-2312.
Schultz B.D, Farrell H.H, Evans M.MR, Ludge K., Palmstrom C.J.  2002.  ErAs interlayers for limiting interfacial reactions in Fe/GaAs(100) heterostructures. Journal of Vacuum Science & Technology B. 20:1600-1608.
Eid K.F, Stone M.B, Ku K.C, Maksimov O., Schiffer P., Samarth N., Shih T.C, Palmstrom C.J.  2004.  Exchange biasing of the ferromagnetic semiconductor Ga1-xMnxAs. Applied Physics Letters. 85:1556-1558.