Publications

Found 6 results
Author [ Title(Desc)] Type Year
Filters: Author is Finstad, T. G.  [Clear All Filters]
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
G
Palmstrom C.J, Sands T., Harbison J.P, Finstad T.G, Mounier S., Florez L.T, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  Growth of buried metal aluminides and gallides and of rare-earth monopnictides in compound semiconductors: a comparison. Proceedings of the SPIE - The International Society for Optical Engineering. 1285:85-94.
I
Chen L.C, Caldwell D.A, Finstad T.G, Palmstrom C.J.  1999.  In situ formation, reactions, and electrical characterization of molecular beam epitaxy-grown metal/semiconductor interfaces. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 17:1307-1312.
Finstad T.G, Palmstrom C.J, Mounier S., Keramidas V.G, Zhu J.G, Carter C.B.  1991.  Initial stages of GaAs growth on Sc 1-xEr xAs surfaces. Evolution of Thin-Film and Surface Microstructure Symposium. :413-18.
L
Palmstrom C.J, Mounier S., Finstad T.G, Miceli P.F.  1990.  LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS. Applied Physics Letters. 56:382-384.
M
Chen L.C, Caldwell D.A, Muller T.A, Finstad T.G, Schildgen W., Palmstrom C.J.  1999.  MBE growth and in situ electrical characterization of metal semiconductor structures. Journal of Crystal Growth. 201:146-149.
P
Hugsted B., Tafto J., Finstad T.G, Palmstrom C.J.  1993.  POLARITY OF SMALL (111)GAAS DOMAINS ON (100)SC0.32ER0.68AS FORMED DURING MOLECULAR-BEAM EPITAXIAL-GROWTH. Applied Physics Letters. 63:2499-2501.