Found 6 results
Author Title [ Type(Desc)] Year
Filters: Author is Cheeks, T. L.  [Clear All Filters]
Journal Article
Palmstrom C.J, Cheeks T.L, Gilchrist H.L, Zhu J.G, Carter C.B, Wilkens B.J, Martin R..  1992.  EFFECT OF ORIENTATION ON THE SCHOTTKY-BARRIER HEIGHT OF THERMODYNAMICALLY STABLE EPITAXIAL METAL GAAS STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 10:1946-1952.
Cheeks T.L, Sands T., Nahory R.E, Harbison J.P, Palmstrom C.J, Gilchrist H.L, Ramesh R., Keramidas V.G.  1990.  EPITAXIAL METAL-III-V SEMICONDUCTOR DOUBLE HETEROSTRUCTURE SCHOTTKY DIODES - CHARACTERIZATION AND NOVEL DEVICE POTENTIAL. Journal of Electronic Materials. 19:40-40.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  New directions for III-V structures: metal/semiconductor heteroepitaxy. Gallium Arsenide and Related Compounds 1991. Proceedings of the Eighteenth International Symposium. :1-8.
Harbison J.P, Sands T., Palmstrom C.J, Cheeks T.L, Florez L.T, Keramidas V.G.  1992.  NEW DIRECTIONS FOR III-V STRUCTURES - METAL-SEMICONDUCTOR HETEROEPITAXY. Institute of Physics Conference Series. :1-8.
Sands T., Palmstrom C.J, Harbison J.P, Keramidas V.G, Tabatabaie N., Cheeks T.L, Ramesh R., Silberberg Y..  1990.  Stable and epitaxial metal/III-V semiconductor heterostructures. Material Science Reports. 5:99-170.
Palmstrom C.J, Cheeks T.L, Nahory R.E, Wilkens B.J, Martinez J.A, Miceli P.F, Keramidas V.G, Zhu J.G, Carter C.B.  1990.  STRUCTURAL AND ELECTRICAL-PROPERTIES OF INSITU FABRICATED EPITAXIAL THERMODYNAMICALLY STABLE SEMIMETALLIC COMPOUNDS ON MBE-GROWN GAAS. Journal of Electronic Materials. 19:39-40.