Publications

Found 28 results
Author Title [ Type(Asc)] Year
Filters: Author is Palmstrøm, C.J.  [Clear All Filters]
Journal Article
Suominen H.J., Kjaergaard M., Hamilton A.R., Shabani J., Palmstrøm C.J., Marcus C.M., Nichele F..  2017.  Zero-energy modes from coalescing Andreev states in a two-dimensional semiconductor-superconductor hybrid platform. Physical Review Letters. 119, 176805
Harrington S.D., Sharan A., Rice A.D., Logan J.A., McFadden A.P., Pendharkar M., Pennachio D.J., Wilson N.S., Gui Z., Janotti A. et al..  2017.  Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions. Appl. Phys. Lett.. 111, 061605
Iyer P.P, Pendharkar M., Palmstrøm C.J., Schuller J.A..  2017.  Ultrawide thermal free-carrier tuning of dielectric antennas coupled to epsilon-near-zero substrates. Nature Communications. 8
Shabani J., Kjaergaard M., Suominen H.J., Kim Y., Nichele F., Pakrouski K., Stankevic T., Lutchyn R.M., Krogstrup P., Feidenhans R. et al..  2016.  Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks. Phys Rev B . 93, 155402
Kjaergaard M., Suominen H.J., Nowak M.P., Akhmerov A.R., Shabani J., Palmstrøm C.J., Nichele F., Marcus C.M..  2017.  Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction. Physical Review Applied. 7, 034029
Rice A.D., Kawasaki J.K., Verma N., Pennachio D.J., Schultz B.D., Palmstrøm C.J..  2017.  Structural and electronic properties of molecular beam epitaxially grown Ni1+xTiSn films. Journal of Crystal Growth. 467
Peterson T.A., Patel S.J., Geppert C.C., Christie K.D., Rath A., Pennachio D., Flatté M.E., Voyles P.M., Palmstrøm C.J., Crowell P.A.  2016.  Spin injection and detection up to room temperature in Heusler alloy/n-GaAs spin valves. Phys. Rev. B 94, 235309.
Kawasaki J.K., Sharan A., Johansson L.I.M., Hjort M., Timm R., Thiagarajan B., Schultz B.D., Mikkelsen A., Janotti A., Palmstrøm C.J..  2018.  A simple electron counting model for half-Heusler surfaces. Science Advances. 4, eaar5832
Rath A., Sivakumar C., Sun C., Patel S.J., Jeong J.S., Feng J., Stecklein G., Crowell P.A., Palmstrøm C.J., Butler W.H. et al..  2018.  Reduced interface spin polarization by antiferromagnetically coupled Mn segregated to the Co2MnSi/GaAs (001) interface. Phys Rev B. 97
Zhang H., Liu C-X, Gazibegovic S., Xu D., Logan J.A., Wang G., van Loo N., Bommer J.D.S., de Moor M.W.A., Car D. et al..  2018.  Quantized Majorana conductance. Nature. doi:10.1038/nature26142
Kjaergaard M., Nichele F., Suominen H.J., Nowak M.P., Wimmer M., Akhmerov A.R., Folk J.A., Flensberg K., Shabani J., Palmstrøm C.J. et al..  2016.  Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure. Nature Communications. 7:12841
Drachmann A.C.C., Suominen H.J., Kjaergaard M., Shojaei B., Palmstrøm C.J., Marcus C.M., Nichele F..  2017.  Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum. Nano Letters. 17
McFadden A.P, Brown-Heft T., Pennachio D., Wilson N.S., Logan J.A., Palmstrøm C.J..  2017.  Oxygen migration in epitaxial CoFe/MgO/Co2MnSi magnetic tunnel junctions. Journal of Applied Physics. 122,1139026
Logan J.A., Patel S.J., Harrington S.D., Polley C.M., Schultz B.D., Balasubramanian T., Janotti A., Mikkelsen A., Palmstrøm C.J..  2016.  Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films. Nature Communications. 7, 11993
Shojaei B., McFadden A.P., Pendharkar M., Lee J.S., Flatté M.E., Palmstrøm C.J..  2018.  Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures. Phys Rev Materials. 2, 064603(https://doi.org/10.1103/PhysRevMaterials.2.064603)
Matsuo S., Kamata H., Baba S., Deacon R.S., Shabani J., Palmstrøm C.J., Tarucha S..  2017.  Magnetic field inducing Zeeman splitting and anomalous conductance reduction of half-integer quantized plateaus in InAs quantum wires. Phys Rev B. 96
Oogane M., McFadden A.P., Fukuda K., Tsunoda M., Ando Y., Palmstrøm C.J..  2018.  Low magnetic damping and large negative anisotropic magnetoresistance in halfmetallic Co2-xMn1+xSi Heusler alloy films grown by molecular beam epitaxy. Appl. Phys. Lett.. 112, 262407(https://doi.org/10.1063/1.5030341)
Christie K.D., Geppert C.C., Patel S.J., Hu Q.O, Palmstrøm C.J., Crowell P.A.  2015.  Knight shift and nuclear spin relaxation in Fe/n-GaAs heterostructures. Physical Review B. 92, 155204
McFadden A., Wilson N., Brown-Heft T., Pennachio D., Pendharkar M., Logan J.A., Palmstrøm C.J..  2017.  Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration. Journal of Magnetism and Magnetic Materials. 444:383-389.
Peterson T.A., McFadden A.P., Palmstrøm C.J., Crowell P.A..  2018.  Influence of the magnetic proximity effect on spin-orbit torque efficiencies in ferromagnet/platinum bilayers. Phys Rev B. 97
Logan J.A., Brown-Heft T.L., Harrington S.D., Wilson N.S., McFadden A.P., Rice A.D., Pendharkar M., Palmstrøm C.J..  2017.  Growth, structural, and magnetic properties of single-crystal full-Heusler Co2TiGe thin films. Journal of Applied Physics. 121
Harrington S.D., Rice A.D., Brown-Heft T.L., Bonef B., Sharan A., McFadden A.P, Logan J.A., Pendharkar M., Feldman M.M., Mercan O. et al..  2018.  Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−x Fex Sb. Phys Rev Materials. 2
Oogane M., McFadden A.P., Kota Y., Brown-Heft T.L., Tsunoda M., Ando Y., Palmstrøm C.J..  2018.  Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films. Jpn. J. Appl. Phys.. 57
Matsuo S., Ueda K., Baba S., Kamata H., Tateno M., Shabani J., Palmstrøm C.J., Tarucha S..  2018.  Equal-Spin Andreev Reflection on Junctions of Spin-Resolved Quantum Hall Bulk State and Spin-Singlet Superconductor. Scientific Reports. 8, 3454
Gazibegovic S., Car D., Zhang H., Balk S.C., Logan J.A., de Moor M.W.A., Cassidy M.C., Schmits R., Xu D., Wang G.Z. et al..  2017.  Epitaxy of advanced nanowire quantum devices. Nature. 548, 434

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