Technology development & design for 22 nm InGaAs/InP-channel MOSFETs

TitleTechnology development & design for 22 nm InGaAs/InP-channel MOSFETs
Publication TypeJournal Article
Year of Publication2008
AuthorsRodwell M., Wistey M., Singisetti U., Burek G., Gossard A., Stemmer S., Engel-Herbert R., Hwang Y., Zheng Y., Van de Walle C., Asbeck P., Taur Y., Kummel A., Yu B., Wang D., Yuan Y., Palmstrom C., Arkun E., Simmonds P., McIntyre P., Harris J., Fischetti M.V, Sachs C.
Journal2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM)
Pagination6 pp.-6 pp.