- B.S. Materials Science and Engineering B.S. Chemistry, Technion- Israel Institute of Technology, 2017
Hadass earned her B.S. in Materials Science and Engineering and B.S. in Chemistry at the Technion- Israel Institute of Technology, where she studied the energy band alignment and microstructure of hematite thin films grown by pulsed laser deposition. She also worked as a summer undergraduate researcher at Northwestern studying solution-processed short-channel carbon nanotube transistors. In Fall 2017 Hadass joined the Palmstrom group, pursing a PhD in Materials at UCSB. On her spare time she enjoys running on the beach, cooking and traveling to beamlines across the world.
Hadass's research interests include the molecular beam epitaxy (MBE) growth, angle-resolved photoemission spectroscopy, and electronic characterization of topologically non-trivial Heusler compounds and rare-earth monopnictides. Fortunately, the structure and lattice parameter of many Heuslers and RE-monopnictides match well to III-V compound semiconductors, an important consideration for future scaling and incorporation with existing semiconductor processing technologies. The wide range of electronic properties in the Heusler family also offers a unique opportunity to study novel Heusler-based heterostructures beyond existing Si or III-V compound devices, with possible applications in spintronics.