Aranya Goswami

Graduate Student


  • B.Tech (Hons) Electronics and Electrical Engineering, Indian Institute of Technology, Kharagpur, 2016


Aranya pursued his undergraduate degree at IIT Kharagpur, majoring in ECE. During this time he worked on simulating transport on Tunnel FETs with IBM SRDC as well as developing computational models of DNA folding on carbon nanotubes at EPFL. His undergraduate work also focussed on designing analog circuits for neuromorphic computing. Aranya joined the Palmstrom group in Fall 2016 and during his PhD he focusses on epitaxial selective area growth of III-V materials using MBE and CBE, microfabrication as well as characterization using multiple electron-microscopic and electrical techniques. 


Confined Epitaxial Lateral Over growth, Selective Area Growth, Chemical Beam Epitaxy, Focussed Ion Beam, Transmission Electron Microscopy, Low temperature transport, Microfabrication, III-V growth, Dilution Refrigerator